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Energy-storage Performance of Modified Zr-richgraded PZT Thin Films

Author: LiuLian
Tutor: ChenXiangQun
School: Harbin Institute of Technology
Course: Materials Physics and Chemistry
Keywords: PSZT thin film graded ferroelectric properties dielectric properties energy-storage
CLC: O484
Type: Master's thesis
Year: 2012
Downloads: 20
Quote: 0
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Abstract


Antiferroelectric materials show potential application in high-density energystorage capacitors, explosive electrical transducers due to the feld inducedantiferroelectric-to-ferroelectric (AFE-FE) phase transition. According to theenergy-storage performance of Zirconium Rich PZT antiferroelectric films, dopingmodification and stack structure designing were conducted.In this paper, highly (100)-oriented Pb1-xSrxZr0.97Ti0.03O3(PSZT) films withSr-doped monocomponent, gradient and sandwich structure were prepared on Pt(111)/Ti/SiO2/Si substrates by the sol-gel technique combined with rapid annealingprocess. The crystalline orientation and microstructure of the PSZT films werecharacterized by X-ray diffraction(XRD) and scanning electron microscopy(SEM).Analysis showed that PSZT films had strong (100) preferred orientation, and lowtexture dispersivitie. Sr dopant contents had little influence on the microstructure of thefilms.The ferroelectric and dielectric properties of PSZT films were systematicallyinvestigated. All PSZT films are antiferroelectrics at room temperature, and AFE-FEphase transition were induced under a certain electric field. The switching feld EAFEand EFEwere dependent on Sr dopant contents, film stack structures and temperature.With the increase of Sr dopant contents, the EFEgradually increased. PSZT films’switching feld decreased with increasing temperature. The test results oftemperature-dependent dielectric constant showed that PSZT films’ Curie temperatureshifted to higher temperature with increasing Sr dopant contents, and the Curietemperature was independent of the film stack structures. The frequency-dependentdielectric properties of graded PSZT films were more stable than monocomponentPSZT films, and the former had significantly lower dielectric loss.The electric field and temperatured-dependent energy storage performance ofPSZT films were studied. Analysis showed that the energy density of PSZT filmsdecreased with increasing temperature. The energy-storage performance ofmonocomponent film PSZT7.5and sandwiched film PSZT7.5-0-7.5significantly improved, and it led to an increase of40%and35%in the energy density respectively,compared with pure PZT films. Simultaneously, their energy loss were lower, leadingto higher energy efficiency. This showed that proper composite doping level of Sr andfilm stack structure design could optimize the energy-storage performance ofZirconium-rich PZT thin-films.

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CLC: > Mathematical sciences and chemical > Physics > Solid State Physics > Thin Film Physics
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