Dissertation 

About 99 item dissertation in line with threshold voltage query results,the following is 1 to 50(Search took 0.066 seconds)

  1. Design and Research on Power Optimization for Chip Based Dual-threshold Voltage Assignment Algorithm,RanFan/Zhejiang University,0/2
  2. The Development of a1200V Non-punch-through Igbt,WeiFeng/Beijing University of Technology,0/48
  3. Low-voltage Oxide Nanowire Electric-double-layer Transistor,LiuHuiXuan/Hunan University,0/54
  4. The study of organic metal compound optical storage media and shape controllable CuSCN particles,YanXiangXiang/Fudan University,0/15
  5. Study of the Phase Change Mechanisms in Ge2Sb2Te5Based Phase-Change Memory,LiYiQing/Suzhou University,0/105
  6. Research on Deep-Submicrometer Fully Depleted SOI BJMOSFET,ZhangYan/Hunan University,1/9
  7. Research on Quantization Characteristics and Threshold Voitage of Uniaxial Strained Si nMOS,CaoZuoZuo/Xi'an University of Electronic Science and Technology,0/12
  8. Study on the Model of Organic Field-effect Transistors with Schottky Contact,FanGuoYing/Lanzhou University,0/16
  9. Charge Control Model and Novel Structures for Gallium Nitride Based Heterojunction Transistors,WangZhiGang/University of Electronic Science and Technology,0/25
  10. Research of Silicon Nanowire Transistor Threshold Voltage Extraction Technology,HongTao/Hunan University,0/37
  11. Study on Threshold Voltage Models for Silicon-based Ge Channel MOSFET,LiZhi/Xi'an University of Electronic Science and Technology,0/44
  12. Pixel Circuit Design of OLED,ZhouLei/South China University of Technology,0/39
  13. The Current Model and Temperature Effects of Thin-Film Double-Gate MOSFET’s,ZuoZuoJiao/Anhui University,0/66
  14. Research on Bulk-Si Bandstructures and Electron Mobility of nMOSFET under Uniaxial Stress,WangGuanYu/Xi'an University of Electronic Science and Technology,0/83
  15. Research and Design of Silicon-based Strained CMOS,QuJiangTao/Xi'an University of Electronic Science and Technology,0/127
  16. A Simulation Study of Tunneling Field Effect Transistors,HanZhongFang/Fudan University,0/210
  17. Inorganic Electric-double-layer Gate Dielectrics and Its Application in Low-voltage Oxide Micro/Nanotransistors,SunJia/Hunan University,0/73
  18. Study of Power System Load Model Based on the Perturbation Method,HanJunXiu/Taiyuan University of Technology,0/68
  19. Design of Low-Voltage Low-Power CMOS Reference,YuGuoYi/Huazhong University of Science and Technology,3/995
  20. Analysis and Modeling of Electrical Parameters for Nanoscale MOSFETs,DaiYueHua/Anhui University,0/390
  21. Improvement of Electro Mechanical Single Electron Transistor Semi-classical Model and Investigation of Its Transport Characteristics,WangYang/Shanghai Jiaotong University,0/82
  22. Study on Performances of OFET Based Copper Phthalocyanine,YuanJianFeng/Graduate Schoo,Chinese Academy of Sciences,1/614
  23. Low-power digital circuit design method,WuFuZuo/Shanghai Institute of Microsystem and Information Technology Research Institute,8/1213
  24. GaAs threshold voltage uniformity and Testing System,ZhuChaoZuo/Shanghai Institute of Microsystem and Information Technology Research Institute,1/103
  25. GaAs MESFET devices and optical communication GaAs circuit,ZhanZuo/Shanghai Institute of Metallurgy , Chinese Academy of Sciences,0/215
  26. Threshold Voltage Model of Small MOSFET and Preparation of High-k Gate Dielectric,JiFeng/Huazhong University of Science and Technology,2/386
  27. Research and Design of Silicon-Based Strained MOSFET,QinShanShan/Xi'an University of Electronic Science and Technology,0/79
  28. Research on NBTI in Ultra Deep Sub Micron PMOSFET Device,HuangYong/Guangdong University of Technology,0/75
  29. Simulation Analysis of Pixel Circuits Based on a-Si TFT Organic Light Emitting Displays,LiYunFei/Beijing Jiaotong University,1/147
  30. Studies on the Effects of Insulator Layers on the Performance of Organic Thin Film Transistors,HuangJinYing/Beijing Jiaotong University,1/304
  31. Threshold Voltage Model of Short-channel MOSFET’s,FengLu/National University of Defense Science and Technology,0/117
  32. Threshold Voltage Model of Small MOSFET and Preparation of High-k Gate Dielectric,LiYanPing/Huazhong University of Science and Technology,0/192
  33. Design and Research on Electrical Characteristics of Dual Material Gate LDMOS,LiuZuo/Anhui University,0/207
  34. Quantum Effect Model and Parasitic Resistance Analysis of Nano-scaled MOSFET,SunJiaE/Anhui University,0/200
  35. The Study of Stripe Domains in Super Twisted Nematic Liquid Crystal Displays,PengXuHui/Hebei University of Technology,0/31
  36. A Study on Static Characteristics of SOI MOSFET,JiangChao/Guangxi University,0/185
  37. The Flexoelectric Effect and the Non-Symmetric NLC Cell,ChenGuiFeng/Hebei University of Technology,1/52
  38. Linear Analysis of Fréedericksz Transition in Nematic Liquid Crystals,ZhuWenFang/Hebei University of Technology,2/60
  39. SPICE Model of Nonuniform Substrate Doping MOSFET,WangYang/Anhui University,1/183
  40. The Design of an Application-Specific Controller for Pyroelectric Infrared Detector,ZengHongBo/Hunan University,0/610
  41. Design and Experiment Research of TV Remote Control System Bsaed Brain-Computer Interface Syetem,ChenZuo/Tianjin University,3/236
  42. Research of Effect for Yield of the Process and Procedure about EEPROM Embedded in MOTOROLA MCU MC68HC (8)05PV8/A,YuXiao/Tianjin University,0/110
  43. Research on On-line Calculation of Power System Steady-state Stability Margin,LiQiang/Hohai University,2/373
  44. LDMOS based on numerical simulation analytical model,WuXiuLong/Anhui University,2/279
  45. Analysis and Design of Low-voltage Low-power Halo MOSFET,DingHao/Anhui University,0/193
  46. Study on the Simulation of Si1-x Gex MOSFETs,WuJianWei/Xi'an University of Electronic Science and Technology,0/111
  47. Insulated gate bipolar transistor (IGBT) Research and Design,WuTao/Zhejiang University,10/1264
  48. The Flexoelectric Effect and the Anchoring Energy of the NLC Cell,AnHaiLong/Hebei University of Technology,1/89
  49. Modeling the temperature characteristic of the short-channel MOST,ZhuXianYu/Anhui University,2/80
  50. Effects of Substrate Material of NDLECSI GaAs on the Performance of MESFET Devices,GuoHui/Hebei University of Technology,0/77

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