About 16 item dissertation in line with Homoepitaxial query results,the following is 1 to 50(Search took 0.050 seconds)

  1. Chemical Vapor Deposition Synthesis, Hydrogen Etching and Homoepitaxial Growth of Single-crystal Graphene,WangHong/University of Science and Technology of China,0/217
  2. Study of Homoepitaxial Growth on On-Axis4H-SiC Substrates and Characterication Methods,YangYang/Xi'an University of Electronic Science and Technology,1/61
  3. CVD Growth and Characterization of4H-SiC Epilayers,YangZuo/Nanjing University,0/154
  4. Design Synthesis and Property Studies of Complex Micro-nanostructures,GuoTaiBo/Hefei University of Technology,0/176
  5. The Influence of Nitrous Oxide on Growth of CVD Single Crystal Diamonds,SuYing/Jilin University,1/68
  6. Preparation and Properties of CVD Hemispherical Diamond Films and Single Crystal Diamonds,WangQiLiang/Jilin University,1/266
  7. Epitaxial growth and structural characterization of SiC films SSMBE,LiuJinFeng/University of Science and Technology of China,3/240
  8. Preparation of Optical Grade Polycrystalline Diamond Films and Homoepitaxial Single-crystal Diamond by MPCVD,LiBo/Jilin University,6/312
  9. The Study on 4H-SiC Homoepitaxial and High-voltage Schottky Barrier Diode Devices,ZhangFaSheng/Hunan University,2/232
  10. Study of the Growth and Properties of Silicon Carbide Epilayer,JiaWei/Xi'an University of Electronic Science and Technology,0/259
  11. Simulation and Experimental Confirmation of the Growth Characteristics of ABO3 Perovskite Thin Film,ZhangQingLei/Sichuan University,0/145
  12. HVPE Growth of GaN for Homoepitaxial Growth,HuangFei/Jilin University,0/306
  13. Investigation of Molecular Dynamics of Structural Defects in 4H-SiC Epitaxial Layers,GaoChunYan/Xi'an University of Electronic Science and Technology,0/73
  14. Preparation of carbon dioxide for MPCVD diamond crystal impact study,ZhangQing/Jilin University,2/78
  15. Preparation and Properties of Polycrystalline and Single-crystal Diamond by MPCVD,WangQiLiang/Jilin University,2/152
  16. Study on Electrical Transport and Breakdown Characteristics of GaN-based Schottky Barrier Diodes,CaoDongSheng/Nanjing University,0/49

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