About 803 item dissertation in line with TN386,Field-effect devices query results,the following is 1 to 50(Search took 0.067 seconds)

  1. Research of Superiunction Power MOSFETs,HuJiaXian/Zhejiang University,0/24
  2. Research on Power MOSFET Model for Reliability Analysis,LiQiuYang/Harbin Institute of Technology,0/76
  3. Investigation on Characteristics of High K Gate Materials and Devices Deposited by ALD,KuangQianZuo/Xi'an University of Electronic Science and Technology,0/147
  4. Damage Effects and Mechanisms Research of Femtosecond Laser on CCD,WangMing/Graduate Schoo,Chinese Academy of Sciences,0/22
  5. The Investigation of High Permittivity Material Applications on Silicon Power Devices and the Realization of Novel Power Devices with High Permittivity Material,LiJunHong/University of Electronic Science and Technology,0/94
  6. The Research and Realization of Coding and Demodulation Method for Absolute Single Encoder,GaoLiNa/Xi'an Optics and Fine Mechanics,0/8
  7. Failure Analysis and Modelling of Power MOS,QiaoChunYu/Tianjin University,0/0
  8. CCD Noise Estimation and Reduction Based on Sparse Representation,WuZhaoYang/Tianjin University,0/1
  9. Research of Reliability of VDMOS Device in the Vibration Environment,GaoXinYu/Harbin University of Science and Technology,0/7
  10. Power MOSFET Devices Integrated with Schottky Diode Simulation and Research,JiaoWenLi/Harbin Engineering University,0/51
  11. Research on Area Array CCD Imaging System Based on the FPGA,ZhangYingYing/Changchun University of Science and Technology,0/2
  12. Simulation Research of Gate Enhanced Power UMOSFET with Deep Trench Dielectrics Engineering,LanZuo/Harbin Engineering University,0/11
  13. Breakdown Model and New Trench Structures of SOI High Voltafe Devices,HuXiaRong/University of Electronic Science and Technology,0/60
  14. Structure Design and Performance Analysis of Novel Microwave Power Silicon Carbide MESFET,SongKun/Xi'an University of Electronic Science and Technology,0/20
  15. The Effects of Gate Dielectrics on Performances of AlGaN/GaN Metal-insulator-semiconductor High-electron-mobility Transistors,TianBenLang/University of Electronic Science and Technology,0/47
  16. Model and Optimization of Superjunction Devices,HuangHaiMeng/University of Electronic Science and Technology,0/31
  17. The Study of New SOI MOSFET Structure and Reliability in Nanometer Scale,CaoLei/Xi'an University of Electronic Science and Technology,0/79
  18. Low-voltage Antimony Doped SnO2Nanowire Transparent Field Effect Transistors,XuanRuiJie/Hunan University,0/22
  19. Research of Function Regulation on the C60 Organic Field-Effect Transistor Based on Pentacene Thickness,LiangXiaoYu/Tianjin University of Technology,0/0
  20. Simulation of Total Ionizing Dose Effect of SOI CMOS Devices and Design of the Irradiation Hardness Techniques,WangWenLong/Hangzhou University of Electronic Science and Technology,0/14
  21. The Circuitry Design of High Frame Rate Image Sensor,HaoYaZuo/Xi'an Optics and Fine Mechanics,0/5
  22. Imaging Technology Based on High Frame Rate Detector,SunNian/Xi'an Optics and Fine Mechanics,0/10
  23. Improvement of Hot Carroer Injection for3.3V NMOS of90nm Technology with T0.1Standard,ZhangBin/Shanghai Jiaotong University,0/6
  24. TCAD Simulation of Ferroelectric Inverter Based on Ferroelectric Field Effect Transistor,LuYanHong/Xiangtan University,0/20
  25. TCAD Simulation of Ferroelectric Field-Effect Transistor,HuangQiang/Xiangtan University,0/32
  26. Fabrication of Graphene Field Effect Transitors on Si Substrate,PanWang/Huazhong University of Science and Technology,0/26
  27. The Research of Impacting Factors and Improvement for Within-shot IDSAT Uniformity,TaoJiaJia/Shanghai University,0/0
  28. The Simulation Research of Single-event Effect in Power UMOSFETs,ZhangYue/Harbin Engineering University,0/46
  29. Research on Noise Mechanisms and Modeling for New Types of Microwave Transistors,ChenYongBo/University of Electronic Science and Technology,0/116
  30. Study on the Surface Potential Based model of GaN HEMT,WangJie/Zhejiang University,0/11
  31. Model and Novel Structures for High Voltage and Low On-resistance SOI Device,FanJie/University of Electronic Science and Technology,0/34
  32. Influence of Ultra-thin EuF3Electrode Modified Layer on the Characteristics of Organic Field-effect Transisitors,LiHong/Graduate Schoo,Chinese Academy of Sciences,0/2
  33. Surface Current Reduced Model and Device of High Voltage ESD Protection in Power Integrated Circuits,JiangZuoLi/University of Electronic Science and Technology,0/46
  34. Study on Novel Half-bridge Power ICS,KongMouFu/University of Electronic Science and Technology,0/87
  35. Study on Power Semiconductor Devices of Smart Power Integrated Circuits,ChengJunZuo/University of Electronic Science and Technology,0/124
  36. Research on Thermal Resistance of Power Device and Interconnect Structure Thermal Fatigue of Power Module,GuoQi/South China University of Technology,0/21
  37. Characteristics Simulation and Analysis of GaN Electronic Devices,YuYingXia/Shandong University,0/98
  38. Investigatioh on Electrical Characteristics of GaN-based MFSFETs,RanJinZhi/Lanzhou University,0/31
  39. The Research of FHXD Power MOSFET Products Reducing Internal Resistance Project,GanHai/South China University of Technology,0/1
  40. Study on Synthesis and measurement system based on linear array CCD,ZhaoJinZuo/Nanjing University of Technology and Engineering,0/18
  41. Design and optimization of the EMCCD driving circuit,HuangQiangQiang/Nanjing University of Technology and Engineering,0/18
  42. High-voltage and High-current Sillicon Carbide MOSFET Series-parallel Connected Module,ChengShiDong/Zhejiang University,0/15
  43. Studies of New Structure Organic Light-emitting Field-effect Transistors,YiRan/Beijing Jiaotong University,0/47
  44. Optical System Design of the Detection of Checking Target Lens,HuYiZuo/Changchun University of Science and Technology,0/1
  45. Study on the Thermal Stress of Millisecond Pulsed Laser Irradiation CCD Image Detectors,PengBo/Changchun University of Science and Technology,0/1
  46. A2-D Semi Analytical Model for Ultra-Short Channel MOSFET Taking into Account the Junctions Depth,HanMingJun/Anhui University,0/3
  47. Solution-Processed Organic Field-Effect Transistors,ZhangRuiRui/Hainan University,0/4
  48. The Research of Parasitic Capacitance for MOSFET Which Is Based on the Semi-analytical Method,WangMin/Anhui University,0/0
  49. Research and Design of Radiation Hardening SOI CMOS Devices Structure,ZhouYongHui/Hangzhou University of Electronic Science and Technology,0/3
  50. Processing and Testing of Graphene Field-effect Transistors,WangYongCun/University of North,0/20

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