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Investigation of Intermetallic Barrier Layer for Integration of Si–based Ferroelectric Capacitors

Author: GuoYingZuo
Tutor: LiuBaoTing
School: Hebei University
Course: Optics
Keywords: Ni-Al Ti3Al Annealing process PZT Magnetron sputtering Sol - gel
CLC: TM53
Type: Master's thesis
Year: 2010
Downloads: 9
Quote: 0
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Abstract


RF magnetron sputtering (RF Magnetron Sputtering) and sol - gel method (Sol-Gel) combination of highly preferred orientation Ti 3 Al film polycrystalline Ni-Al thin film amorphous Ti-Al thin film as the conductive barrier layer on the Si substrate was prepared La 0.5 Sr 0.5 CoO 3 / Pb (Zr 0.4 Ti 0.6 ) O 3 / La 0.5 Sr 0.5 CoO 3 (LSCO / PZT / LSCO) ferroelectric capacitor. Application of X-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscopy (AFM), ferroelectric tester (Precision LC unit) and LCR table to study the microscopic structure of the thin film samples, surface morphology, different layers the interface capacitor ferroelectric properties and annealing processes of Pt / LSCO / PZT / LSCO / Ti-Al / Si capacitor performance. Polycrystalline Ni-Al does not react with LSCO, but to react with Si in a 550 oC oxygen environment to generate local epitaxial growth NiSi. The NiSi having good electrical conductivity and thermodynamic chemical stability, can play the role of the barrier layer. LSCO / Ni-Al / Si heterojunction conductive with the thickness of the Ni-Al increases. Polycrystalline Ni-Al, to a thickness greater than 60 nm as a conductive barrier layer, a good the PZT capacitor performance prepared, and the residual polarization intensity is measured vertically 16-22μC/cm2, the leakage current density of 2 × 10-5 A / cm2. But ultra-thin polycrystalline Ni-Al can not be used as the conductive barrier layer. Successfully prepared on Si (111) substrate highly preferred orientation Ti 3 Al film, Ti 3 Al in the high-temperature heat treatment process exhibit good resistance to oxidation and barrier properties. In highly preferred orientation Ti 3 Al film as a barrier layer of the PZT capacitor than amorphous Ti-Al film as a barrier layer of the sample has a higher intensity of polarization, the smaller the coercive field strength, and a larger dielectric constant, respectively 23μC/cm2, 1.9 kV / cm and 590. The amorphous Ti-Al film after different annealing process still has an amorphous structure, and the rapid annealing 6 min samples having good physical properties. LSCO / PZT / LSCO capacitor residual polarization and the coercive field strength under the applied electric field of 418 kV / cm, respectively for 22μC/cm2 and 83 kV / cm. LSCO / PZT / LSCO capacitor leakage behavior does not depend on the annealing process, when the electric field is lower than the 46.7 kV / cm for ohmic conductive samples when the electric field strength is higher than the 46.7 kV / cm for Schottky conduction mechanisms.

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CLC: > Industrial Technology > Electrotechnical > Electrical > Capacitor
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