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Preparation of Al-N Codoped Zn1-xMgxO Thin Films with Different N Source and Its Property Researches

Author: GaoGuoHua
Tutor: YeZhiZhen
School: Zhejiang University
Course: Materials Science
Keywords: p-Zn1-xMgxO film Al-N codoped technology DC reactive magnetron sputtering method Different N sources Electrical properties
CLC: TB43
Type: Master's thesis
Year: 2007
Downloads: 48
Quote: 1
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Abstract


ZnO is a II - IV family of wide ban with a semiconductor material, the band gap of about 3.3 eV at room temperature, the exciton binding energy up to 60 meV. Currently, ZnO is a hot research field of optoelectronic materials, the conductance of the p-type doping and bandgap engineering is the focus of the study. In recent years, Yamamoto, raised activity of the donor and acceptor co-doping technique provides a new way to obtain a stable low-resistivity p-ZnO film. In addition, by changing the amount of incorporation of the ZnO and Mg, so that Mg substituted Zn atoms, the the formed Zn 1-x O the of Mg x film in maintaining the structure of wurtzite premise becomes possible to adjust the variation of the band gap between 3.3 ~ 4.0 eV. However, due to the resistance of Zn 1-x Mg x O film itself, increase the difficulty of the properties of p-type conductivity. Respectively select high purity the NH 3 and high purity N 2 O as N gas doping source using DC reactive magnetron sputtering method to prepare Al-N codoped Zn 1-x Mg x O films. The main research work are as follows: NH 3 as N source, glass as substrate, substrate temperature Preparation of Al-N co-doped Zn 0.95 Mg 0.05 O films. Found that when the substrate temperature is 500 ° C, the film prepared from p-type conductivity having a good crystalline quality and stable performance, a hole concentration of 1.23 × 10 17 cm -3 , mobility was 0.41 cm 2 / Vs, and the resistivity was 171Ωcm. To compare the Mg content of Al-N co-doped Zn 1-x Mg x O performance of the film, and found that the doping of Mg in the modulation of the band gap of ZnO thin films width, and Al-N codoped Zn 0.9 Mg 0.1 O thin film p-type conductivity superior co-doped Zn 0.95 Mg 0.05 O films. Al-N co-doped Zn 0.9 Mg 0.1 O films prepared on n-Si (111) substrate, the formation of p-Zn 0.9 mg 0.1 O / n-Si heterojunction Ⅰ - Ⅴ characteristic test results showed significant rectifying characteristics. N 2 O as the N source, glass as a substrate, the fixed substrate temperature of 500 ° C was prepared under the different N 2 O partial pressure ratio condition Al-N codoped Zn the 0.95 O film in Mg 0.05. Found that when N 2 O partial pressure ratio of 0.7, the Al-N co-doped Zn 0.95 Mg 0.05 O film prepared with the best crystalline quality, and in this case the conductivity type of the film shown as a stable p-type, the hole concentration and mobility for of 6.04 × 17 cm -3 , 0.619 cm < sup> 2 / Vs, resistivity was 95.6Ωcm. Relative to the undoped ZnO film, Al-N codoped Zn 0.95 Mg 0.05 O film transmission spectra showed obvious blue shift. Al-N codoped in the oxygen-enriched atmosphere of Zn 0.9 O Mg 0.1 film subjected to annealing heat treatment, improving the crystalline quality of the film, while improving the co-doped films p type conductive properties of the hole concentration and mobility were 5.93 × 10 15 cm -3 0.133 cm 2 / Vs increased to 2.84 × 10 18 cm -3 0.568 cm 2 / Vs, and strengthen the stability of the p-type conductivity.

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