Dissertation > Excellent graduate degree dissertation topics show

Phosphorus-doped nanocrystalline silicon thin films and related characteristics of

Author: LiuXuWei
Tutor: ZuoXiaoYong
School: Zhengzhou University
Course: Optics
Keywords: Solar cells Plasma enhanced chemical vapor deposition ( PECVD ) Nanocrystalline silicon thin film Magnetron sputtering Silver oxide film
CLC: O484
Type: Master's thesis
Year: 2007
Downloads: 193
Quote: 2
Read: Download Dissertation

Abstract


Several methods of thin film material was prepared in the most mature technology, relatively simple to operate a plasma-enhanced chemical vapor deposition (PECVD), and can be prepared by a large area thin film of high uniformity. But by PECVD deposition of high quality polycrystalline silicon thin film still must clarify two issues: First film microstructural characterization; film transport properties. The micro-structure and transport properties of the film to determine the performance of the battery, so the preparation of high-quality films are key to the production of solar cells. To solve these problems, researchers have multiple dedicated to the optimization of the deposition conditions and some auxiliary means. PECVD method, crystalline silicon thin film crystallization rate of the tax collectors and taxpayers, the average grain size of the substrate temperature, silane concentration studied, results nanocrystalline silicon thin films were prepared to study phosphorus doping on nanocrystalline the rate of crystallization of silicon thin film conductivity, the average grain size, lattice distortion and optical band gap of the film growth model and quantum dot tunneling model a reasonable explanation. The results showed that: (1) of the crystalline silicon thin film, of the present NANOFILTRATION silane concentration, the lower, the better the inflection point temperature of crystallization, the crystallization rate is lower; average grain size, crystallization rate with increasing temperature of the substrate having a similar variation (2) influencing factors of phosphorus-doped N-type nanocrystalline silicon thin film conductivity both free carrier concentration and mobility, while the dominant factors that affect the intrinsic nanometer silicon conductivity carrier mobility , the concentration of free carriers have limited impact. Doped with a small amount of phosphorus will promote crystallization and enhance conductivity; cause excessive phosphorus-doped lattice distortion, is not conducive to the crystallization rate and electrical conductivity increased. The experimental results are available quantum dots tunnel wear (HQD) model is a reasonable explanation. (3) silicon thin film of nanocrystalline silicon grain distribution was disordered state, there is no particular preferred orientation distribution; the smaller the grain size, the larger the lattice distortion caused by the reason is that the smaller the grain size, the surface of the additional pressure The larger the larger the grain distortion. (4) the nanocrystalline silicon thin film of the optical band gap E opt and the micro-structure of the crystal is closely related to the dopant concentration is low, E opt reduced, doping concentration higher, E opt increases. (5) reactive magnetron sputtering silver oxide film, oxygen, argon contribute to the oxidation of silver increased up to 2:1 when silver will complete oxidation. And accordingly drawn: the mask-to-noise ratio of the oxygen-argon ratio of 2:1 under the conditions of silver oxide prepared.

Related Dissertations

  1. Investigation of Preparation and Properties of Ordered Porous TiO2,TB383.2
  2. LSGM electrolyte thin films and electrochemical properties of,TM911.4
  3. Pyridine Metal Complexes electronic spectra and redox properties of theoretical research,O627
  4. Measurement the Ion Density and Energy of Plasma in Magnetron Sputtering Filming,TG174.4
  5. Preparation and Properties of Non-hydrogenated Diomand-like Carbon and Non-hydrogenated Si-doped Diomand-like Carbon Films,TB383.2
  6. Two-dimensional Tunable Bandgap Photonic Crystals Based on VO2 Phase Transition,O734
  7. Preparation and Properties Research of Ba0.8 Sr0.2 Tio3 /CoFe2O4 Multi-iron Thin Films,O484.1
  8. Preparation and Characterization of Doped Cu3N Thin Films by Magnetron Sputtering,O484.1
  9. The Research of the Dye-Sensitized Nanocrystalline TiO2 Solar Cells,TM914.4
  10. Preparation and Property-research of BiFeO3 Ceramics and Thin Solid Films,O484.1
  11. Mn doping Preparation of Ga_2O_3 films , structure and optical properties of,O484.1
  12. Design, Synthesis, and Optoelectronic Properties of Novel Poly-(para-phenylene Vinylene) Derivates (PPVs),O632
  13. Preparation and Application of Poly(4-vinylpyridine) Quasi-solid Electrolyte,TM914.4
  14. The magnetron sputtering containing helium titanium film and thin film deposition Monte Carlo simulation study,O484.1
  15. Research on the Experiments of Copper Thin Films Onto Silicon Wafers Tread by Laser Shock Processing,O484.1
  16. Preparation and Tribological Properties of Tungsten Disulfide （WS2） Film,O313.5
  17. Research on a New Texturization Method for Single Crystalline Silicon Solar Cells,TM914.4
  18. Doped ZnO thin films growth and properties of lithium storage,O484.1
  19. Study on Radio-Rrequency Reactive Magnetron Sputtering for the Single-Phased Ag2O Films for Optical and Magneto-optical Storage,O484.1
  20. Study on Preparation and Properties of Silver Oxide Thin Film,O484.1
  21. The Eloectro-Optical Property of TiN_x Films Prepared by Magnetron Sputtering,O484.1

CLC: > Mathematical sciences and chemical > Physics > Solid State Physics > Thin Film Physics
© 2012 www.DissertationTopic.Net  Mobile