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Effect of Electron Irradiation on the Properties of Monocrystalline Silicon

Author: MaXiaoZuo
Tutor: TangChengChun；ChenGuiFeng
School: Hebei University of Technology
Course: Materials Physics and Chemistry
Keywords: Electron irradiation Monocrystalline silicon Irradiation defects Oxygen precipitation Clean area
CLC: TN304
Type: Master's thesis
Year: 2010
Downloads: 56
Quote: 0
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Abstract


The development of production can not be separated from the silicon material of modern microelectronic devices , integrated circuit technology continues to update monocrystalline very strict requirements . Monocrystalline silicon electron irradiation effect of the research and development of new irradiation gettering process has important theoretical significance and practical value . In this paper, Fourier transform infrared spectroscopy (FTIR, Fourier Transform Infrared), the Hall effect tester ( Hall ) , as well as the chemical corrosion of the defects introduced by electron irradiation of irradiation defects with annealing temperature change and its thermal stability , on monocrystalline silicon electrical performance and rapid thermal processing irradiated monocrystalline silicon gettering performance following results were obtained : the introduction of VO, VO2, CiOi and oi2 complex electron irradiation in the silicon single crystal . These composite appreciate the introduction of the acceptor level in the band gap , the carrier concentration decreased . The larger the irradiation dose , the greater the concentration of the introduction of irradiation defects , wherein VO composite body introduced concentration (dose ) m is proportional to , wherein the m value of the silicon single crystal of high oxygen and hypoxia , respectively 0.75 and 0.8 . 830 cm-1 infrared absorption peak in the presence of a weak associated peak 826 cm-1 (V2O), its strength and irradiation dose . These complex in the 700 ° C heat treatment basically eliminated, the carrier concentration restored to the level before irradiation . VO2 composite body stability with temperature, the temperature, and decreased stability . In the vicinity of 450 ℃ , the existence of metastable structures VO2 * defect . There is a satellite peak peak of 887 cm- 1 to 884 cm- 1 is considered to be the [ VO2 V ] defect . Electron irradiation of monocrystalline silicon by rapid thermal processing ( RTP Rapid Thermal Processing ) and high temperature step heat treatment , can be formed in the body clean area ( DZ , Denuded Zone ) and bulk defects ( BMDS , Bulk micro Defects ) . DZ width and the density of oxygen precipitates can be controlled by adjusting the RTP pretreatment temperature, the cooling rate of annealing atmosphere . RTP temperature , DZ width narrowing , the BMD density increases , the stacking fault smaller size ; cooling rate increases , DZ width narrows , the BMD density increases ; the RTP than Ar atmosphere to better promote electron irradiation under N2 atmosphere the process of precipitation of oxygen in the silicon single crystal , and is formed of a narrow DZ , the BMD density BMD increased in size and the structure is more complex .

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