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Study on Optical Properties of As2S8 Amorphous Semiconductor Films Waveguide

Author: LinHeShan
Tutor: ZouLinEr
School: Nanchang University
Course: Optical Engineering
Keywords: Integrated Optics As2S8 amorphous semiconductor Index of refraction Illumination Annealing
CLC: TN252
Type: Master's thesis
Year: 2011
Downloads: 17
Quote: 0
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Abstract


Sulfur-based semiconductor glass having a large nonlinear refractive index , a wide infrared through the window and into the glassy ability is excellent ultrafast all - optical switching device written one of the best materials in the infrared band , the electro - optic modulator , the light communication band all-optical switches , such as the field of optoelectronic integrated device with broad application prospects . This study As2S8 amorphous semiconductor film , the optical properties of the waveguide under the action of light and heat treatment , mainly in its refractive index and thickness changes . The article focuses experiment As2S8 amorphous semiconductor thin-film waveguide refractive index and thickness changes in the under the action of light and heat treatment . As2S8 amorphous semiconductor film in the UV irradiation effect observed the effects of the refractive index increases , the refractive index increases with the irradiation time becomes saturated, at 70 minutes after the refractive index increment of reach saturation . In addition, the annealing process , deposited As2S8 amorphous semiconductor film refractive index increases effect was found when the annealing temperature exceeds 160 ° C , annealing As2S8 film refractive index increased significantly . Meanwhile, in the above UV irradiation and heat treatment process , it is observed As2S8 thickness of the film changes , and found that the light with the annealing treatment have led to the As2S8 film thickness decreases . The illumination caused by the amount of decrease of the film thickness after 45 minutes of irradiation time tends to be unchanged, while the annealing caused a decrease of the film thickness after the annealing temperature is higher than 160 ° C , more obvious . In addition , experimental studies light saturation state As2S8 film after annealing , the annealing temperature is below 160 ° C , the refractive index is basically unchanged , while the refractive index is significantly reduced when the annealing temperature higher than 160 ° C , and that the effect of the light associated annealing , As2S8 film refractive index is a reversible phenomenon . In addition, the study , As2S8 film refractive index changes in annealed - light saturation - the effect of annealing associated ; well as the annealing - light is not saturated - the effect of annealing associated , As2S8 film refractive index change . The experimental trial Based on the above experimental data , the last As2S8 glass strip waveguide , and through the As2S8 film waveguide optical transmission characteristics experiments , shows good conductivity model , its transmission loss of approximately 0.76dB/cm .

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Photonics technology,laser technology > Optical waveguide and integrated optics > Waveguide
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