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In recent years in the field of semiconductor materials, nano-zinc oxide (ZnO) semiconductor materials has been a focus for researchers, especially in its applied research. Because of the excellent properties of one-dimensional ZnO nanomaterials in many ways, inspired a lot of interest and continuously explore, one-dimensional ZnO Nanomaterials with newer development. Now ZnO nano materials and more diverse, the process is relatively simple, low cost, prepared at the same time one-dimensional orientation of ZnO nano-arrays tested showed good optical and electrical properties. Satisfied / micron scale ZnO heterojunction by the scientists of great concern, its experimental and theoretical basis for future research and development of new optoelectronic devices and preparation. In this paper, the main work is as follows: 1, the use of hydrothermal synthesis method, ammonia to the reaction solution, the temperature was set to 95 ° C, in the preparation of a one-dimensional array of ZnO nano metal Zn-chip, the use of physical and chemical methods and it The morphology and structure of the testing and research. During the experiment, we found that a change of the concentration of the reaction, the reaction time, reaction temperature and other factors to control the diameter and length of the one-dimensional ZnO nano-arrays, but also to explore the mechanism of its growth, including ZnO nucleation and growth of ZnO nanowires two stages. This method compared with other methods, the reaction temperature is lower and easy to operate, without catalyst, and the preparation of nano ZnO array of field emission, optical devices has great value, is expected to be applied to large-scale production preparation. 2, ZnO nano-arrays of one-dimensional substrate, electrochemical deposition and dip plating prepared by two methods ZnO-Cu 2 O nano-composite array. X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM), the samples were analyzed and characterized, we will find the nano-array surface becomes rough, diameter from 20 to 60 nm to about 30 -60nm Cu 2 O the growth of nuclear and also covers the top of the ZnO nanowire arrays. We also use the voltammetry for the IV characteristics of the sample to be tested and analyzed. Test results show that as the voltage increases, the diffraction peaks of the nano-composite array does not appear significant changes in the lattice structure is relatively stable. Is worth noting that the ZnO-Cu 2 O nanocomposite array showed high sensitivity, it has great potential in optoelectronic devices.
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