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Low-dimensional zinc oxide -based materials and the light detector and solar cell applications

Author: ZhuDongDe
Tutor: JiangHuiLin；ZhongJingChang
School: Changchun University of Science and Technology
Course: Optical Engineering
Keywords: Sol - gel method Metal - semiconductor - metal Schottky contact Chemical solution deposition method Nanorods Dye-sensitized solar cells Conversion efficiency Photoconductive
CLC: TM914.4;TN23
Type: PhD thesis
Year: 2010
Downloads: 184
Quote: 0
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Abstract


Zinc oxide -based semiconductor material is a popular class of wide band gap materials drinking purposes , both in the short-wavelength light emitting devices left in fear detection device research, have a very important stiff values. Especially zinc oxide -based low-dimensional materials and structures , and a more quiet and more novel electrical offspring band characteristics and optical properties. Papers main results obtained are as follows: 1 , the probe by sol - gel method, were prepared on the surface of the glass substrate MZO films with excellent performance . Acts absorption spectrum obtained in the test material bandgap range 3.25-3.45eV, indicates that material in the ultraviolet and short visible range with good properties. By chemical liquid phase in the sol - gel method of intimidating the MZO film of ZnO nanorods and impaired columns. The results show that ZnO nanorods with wurtzite (Wurtzite) orange structure which is oriented [ 002 ] plane c-axis direction . 2, in the ultraviolet detector research, studied three kinds of important device ( 1 ) developed a thin film of zinc magnesium oxide type Kente Ji MSM ultraviolet detector . Light response of the detector when the bias voltage is 10V, the device is in the range of 300-375nm with a good response . ( 2 ) the development of ZnO nanorods and Schottky -type UV detector. The response characteristics of the devices in the 300-370nm range of the device has a good light by the response , and in the 5V bias, UV - visible rejection ratio of 864.3 , and the typical dark current high photocurrent than three orders of magnitude . Fear of the incident 370 nm and 5 V bias voltage , the optical response is 0.73A / W, the quantum efficiency of 21.9% ( 3 ) developed a barrier MgZnO nanorods photoconductive UV detector column . MZO nanorods optical absorption wave fear reach 315nm, compared with ZnO nanorods (370 nm) is shorter 3 , explore different forms of zinc oxide nano- particles of powder developed a dye-sensitized solar cells. The results showed that different size ZnO nanoparticles sealed battery short-circuit current , efficiency has a significant impact . AM 1.5 and the optical density at 100mW/cm2 conditions, small particle (diameter about 10 nm) prepared by the cell efficiency crack 0.15 %, better than the number of large particles of about 2 pole

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