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Study on Deposition of Vanadium Oxide Thin Films and Resistance Temperature Properties for Micro-bolometer

Author: LiangJiRan
Tutor: HuMing
School: Tianjin University
Course: Microelectronics and Solid State Electronics
Keywords: Vanadium Oxide Thin Films Micro- bolometer Phase transition properties Temperature Coefficient of Resistance DC magnetron sputtering Ion beam sputtering
CLC: O484
Type: PhD thesis
Year: 2007
Downloads: 227
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Abstract


Vanadium oxide films have high temperature coefficient of resistance (TCR), is the preparation of micro-bolometer ideal for heat-sensitive materials. High temperature coefficient of resistance and good insulation structure is to obtain high-performance micro-bolometer premise. In this thesis, DC and RF magnetron sputtering ion beam sputtering two kinds of vanadium oxide thin films were prepared to study the high substrate temperature state SiO 2 and Si 3 N 4 substrate surface vanadium oxide film composition on the impact of low-cost thermal oxidation state of vanadium oxide films and thermal reduction higher valence vanadium oxide thin films were prepared with the way the phase transition properties of vanadium oxide thin films, analysis of the phase transition properties of vanadium oxide film composition, crystalline structure on the phase transition temperature and the room temperature coefficient of resistance, design and production of VO x / PS / Si structure and VO x / Si structure, and the temperature sensitivity of vanadium oxide thin films were compared, obtained some interesting results. SiO 2 and Si 3 N 4 substrate at 500 ℃ high substrate temperature, the surface activity increased, SiO 2 surface vanadium oxide thin film growth in oxygen increases, Si 3 N 4 surface vanadium oxide thin film growth in the oxygen reduction, thus affecting its vanadium oxide thin films grown on the composition, the same partial pressure of oxygen, SiO 2 substrate surface valence of vanadium oxide thin films is higher than Si 3 N 4 substrate surface valence vanadium oxide thin films state; elevated basal temperature, SiO 2 substrate surface valence vanadium oxide thin films increased, Si 3 N 4 substrate surface of vanadium oxide valence of the film. Were used DC magnetron sputtering low valence vanadium oxide thin films prepared by re-attach thermal oxidation treatment methods, and radio frequency ion beam sputtering of vanadium oxide thin films expensive ways to handle the additional heat reduction obtained with vanadium oxide phase transition film, a first characteristic obtained by the phase change heat treatment temperature of the film of vanadium oxide minimum 300 ℃, overcomes the high temperature heat treatment is not compatible with MEMS technology shortcomings; phase transition in the composition of vanadium oxide films VO 2 -based, containing V2O3 and VO , temperature TCR of -2.25% / K; room temperature coefficient of resistance with lower phase transition temperature gradually increased; the second method is obtained phase transition in vanadium oxide thin film components VO 2 -based, containing V2O5 and V2O3, TCR at room temperature up to -3.0% / K; analysis found that, with the phase transition of vanadium oxide thin film containing V2O5 , the temperature coefficient of resistivity at room temperature was increased. The use of radio frequency ion beam sputtering of vanadium oxide thin films were prepared on the oxygen ratio of 48.83% vanadium oxide thin films prepared by two consecutive 450 ℃ / 3h treatment, access to the room temperature coefficient of resistance up to -4.7% / K vanadium oxide thin films. Compared VO x / PS / Si structure and VO x / Si structure of vanadium oxide thin film resistors heat sensitive to temperature can study the porous silicon substrate temperature on vanadium oxide film composition effects. Porous vanadium oxide on the silicon substrate than the silicon thin-film resistors on the bottom of vanadium oxide thin film resistors higher temperature sensitivity, the resistance rate of change with the power of silicon 20 times; prepared by adjusting the conditions of the porous silicon substrate obtained on Suitable micro-bolometer applications vanadium oxide films; high temperature state, the porous silicon surface covered with SiO 2 layer of high activity, vanadium oxide film obtained vanadium is oxidized to a greater extent.

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CLC: > Mathematical sciences and chemical > Physics > Solid State Physics > Thin Film Physics
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