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Fabrication and Electron Field Emission Properties of Oxide Semiconductor Nanostructure

Author: ZhangYongSheng
Tutor: ZhuZiQiang
School: East China Normal University
Course: Radio Physics
Keywords: Oxide semiconductor nanostructure Patterned growth Micro-nano circuit Nanocrystalline silicon Field emission
CLC: O472
Type: PhD thesis
Year: 2006
Downloads: 371
Quote: 1
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Abstract


With the development of science and technology, the research of nanomaterials has become increasingly important. The fabrication and application of wide-band metal oxide nanostructure is one of the focuses of current nanomaterials studies. These metal oxide nanostructures not only are mostly excellent semiconductor nanomaterials, but also possess the physical and chemical properties of nanomaterials proper. However, the study of semiconductor nanomaterials with different aspects, such as their synthesis and application, growth mechanism and characteristic investigation, electronic field emission study, etc., involves many new subjects and requires extensive research. New materials, technologies, study approaches and methods emerge constantly, the scope and depth of research will also increase greatly. Therefore, the significance of exploring both in theory and in application the nanostructural characteristics in terms of fabrication, electronic field emission and sensor, cannot be exaggerated. Supported by the National Science Foundation for Distinguished Youth Scholar （No. 69925409）, the National Natural Science Foundation （No. 10374027, No. 60476004） and the Foundation of GS of East China Normal University （2004-2005）, the fabrication and patterned growth of wide-band oxide semiconductor nanomaterials with different aspects on different substrates, especially fine patterned hierarchical growth, direct growth of micro-nano circuit of ZnO nanostructure, electronic field emission, ZnO, SnO2 and other nanostructure as used in sensor, the fabrication and field emission properties of ZnO nanostructure and carbon nanotube composite structure and metal film belts, are investigated in-depth in this project. Main research contents and innovative results are listed as the following: 1. The ZnO and SnO2 nanostructure with different aspects have been synthesized in many kinds of substrates （silicon, quartz, porous silicon, glass, nanocrystalline silicon, etc.） using thermal evaporation vapor phase transport and changing different technical parameters. The effects on sample aspect using different growth parameter have been compared, and the growth mechanisms have been analyzed, and the field emission properties have also been researched. The herringbones GaN nanostructures have been fabricated on silicon substrates. The patterned array of ZnO nanostructure grown on silicon substrates has been studied. The ordered rectangle array with unit of 80×200 μm2 has been fabricated. ZnO nanostructures have a good behavior of selective-area growth. The field emission of the array has been researched and the excellent, emission images are obtained. It has practical importance for the realization of high quality pixel of field emission. The fine patterned hierarchical growth of ZnO nanostructure on silicon substrates has been researched using a two-step method. The high quality ring-like micropatterned array has been fabricated and quasi-perpendicular growth of ZnO nanowires to the substrates has been realized. The

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