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Preparation and Characteristics of LiNbO3/Nb:SrTiO3Heterojunction

Author: SunYunQuan
Tutor: LiShouChun
School: Jilin University
Course: Optical Engineering
Keywords: perovskite oxides heterojunction space charge limited current resistive switching effect magnetron sputtering
CLC: O484.1
Type: Master's thesis
Year: 2013
Downloads: 34
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Abstract


The development of integrated photonics industry requires theminiaturization and integration of devices, which gradually attractedconsiderable interest in thin-film materials and devices research. Andthe acquirement of high-quality thin-film materials and devices alsogreatly promoted the development of microelectronics and photonicstechnology. Thus, the preparation technology of thin-film materials anddevices has been widespread concern. Magnetron sputtering is one of themost advanced methods for thin-film growth. In this thesis, LiNbO3filmsand its heterojunction LiNbO3/Nb:SrTiO3have been fabricated by magnetronsputtering technique and the electrical characteristics of the junctionshave been investigated.Firstly, the magnetron sputtering process was described in detail andthe type of magnetron sputtering technology has been studied thoroughly.The impacts on film deposition rate of deposition parameters, such as gasflow，RF power，target-substrate distance and the sputtering pressure,have been investigated systematically. LiNbO3thin films were depositedon the （100） oriented,1wt%single crystal substrate by magnetronsputtering method with the best deposition parameters. Then the films werecharacterized by X ray diffraction, Raman spectroscopy, transmissionspectroscopy.The interfacial electrical transport and electrical properties ofheterojunction LiNbO3/Nb:SrTiO3have been investigated systematically.The I-V curves show rectifying properties like conventional p-n junctionsand the interfacial current transport is mainly dominated by the spacecharge limited current （SCLC） mechanism. Significant I-V hysteresis loops and resistive switching effects were obtained by scanning voltage withdifferent directions or applying pulse voltages with opposite polarities.The traping-detraping processes of electrons caused by defects in theinterfaces of heterojunctions are thought to be the main reason for thephenomena obtained. This work helps us to understand the physicalmechanisms of laser-matter interaction and master the key to the pulsedlaser deposition technique. Besides, it is creative for the studies ofthe new properties of the LiNbO3film, the exploration of the physicalmechanism of the resistance switching effect and the research anddevelopment of the oxide optoelectronic materials and devices.

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CLC: > Mathematical sciences and chemical > Physics > Solid State Physics > Thin Film Physics > Film growth,structure and epitaxy
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