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Study of AlGaN/GaN HEMT Characteristics and Suppressing Current Collapse

Author: YanYu
Tutor: LiuLianHui
School: Xi'an University of Science and Technology
Course: Microelectronics and Solid State Electronics
Keywords: AlGaN / GaN HEMT Polarization effects Current collapse pn junction
CLC: TN304.2
Type: Master's thesis
Year: 2011
Downloads: 51
Quote: 0
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Abstract


Wide band gap direct band gap GaN semiconductor material with a band gap , high electron drift velocity , high breakdown electric field , high thermal conductivity , chemical stability , anti- radiation , is the production of high-temperature high-power , high-frequency electronic devices ideal materials. GaN HEMT based on AlGaN / GaN heterostructure - based devices manufactured . GaN HEMT devices has obvious advantages in microwave high-power and high-temperature applications , has become one of the hot spots of the current study . AlGaN / GaN HEMT yet commercially available, mainly because of the AlGaN / GaN HEMT current collapse seriously affect device performance . In order to further improve the performance of the A1GaN/GaN HEMT devices , it is necessary to study and optimization of the two - dimensional electron gas in a HEMT device , and to study the inhibition of the current collapse . Based on the detailed study of polarization effects on AlGaN / GaN HEMT devices . The main research work and achievements are as follows : ( 1 ) the introduction of the polarization effect of the physical model of polarization effects caused by the band changes the characteristics of the two-dimensional electron gas density and electric field strength , can more accurately reflect the AlGaN barrier layer thickness and Al content , Schottky contacts , ohmic contact output characteristics ; (2 ) the study of the different characteristics of the HEMT structure . The introduction of the GaN layer will reduce the output current; double heterojunction structure can increase the output current, and changing the thickness of the double heterojunction structure can increase or decrease the output current ; wide band gap AlN introduction of the barrier layer can increase the height of the barrier , same time can increase the output current; narrow bandgap InGaN not conducive to improve the 2DEG density and output current ; the gate of the MOS structure of the gate leakage current can be effectively reduced without affecting the output current source and drain ; (3) the current collapse severely affected HEMT the application of the device to study the mechanism of its formation and the method of suppressing the current collapse , and proposes a new method of suppressing the current collapse i.e. the introduction of the p - type dopant and the lower N-type doping in the upper part of the AlGaN layer forming a pn junction . This method is verified by simulation can effectively reduce the current collapse .

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > General issues > Material > Compound semiconductor
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