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Research of Large Scale Diamond Films Deposition Using a Novel MPCVD Apparatus

Author: WengJun
Tutor: WangJianHua
School: Wuhan Institute of Technology
Course: Materials Science
Keywords: New microwave plasma Chemical vapor deposition A large area Diamond film
CLC: O484.1
Type: Master's thesis
Year: 2011
Downloads: 93
Quote: 0
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Abstract


Diamond film hardness, thermal conductivity, carrier mobility, chemical stability, excellent physical and chemical properties make it a very promising new material. Chemical Vapor Deposition Chemical vapor deposition. (CVD) diamond have similar excellent performance with natural diamond has been widespread concern in all areas. With the development of science and technology, a variety of application areas and continuously improve the quality and size requirements of the CVD diamond film high quality CVD diamond film device and process parameters on the deposition of a large area of ??the system in-depth study is imperative. Microwave plasma chemical vapor deposition (Microwave plasma CVD, MPCVD) has become the preferred method of preparation of high-quality large area diamond film with its unique advantages, favored by the majority of researchers. In this paper, a new large area diamond film can be prepared MPCVD device were key issues for large area CVD diamond film. New MPCVD apparatus resonant cavity for more than one mold cavity, the ball of the large volume of plasma in the device during operation, TM01 and TM02 two modes of the microwave into the resonator cavity, to be superimposed above the substrate, to stimulate the working gas forming a stable . At the same time, the apparatus can achieve a high-power microwave fed, capable of forming a high density plasma discharge, these provide favorable conditions for the high-speed film deposition of large area diamond. Deposition process parameters for a large area CVD diamond film from the substrate temperature, microwave power, deposition pressure, carbon source concentration system. And from the CVD diamond film deposition mechanism, analyzes the impact of various process parameters on a large area CVD diamond film deposition mechanism, to grasp the inherent law of CVD diamond film preparation to meet the different requirements of a large area of ??the new MPCVD device. Found through experiments, lower deposition temperatures will produce more secondary nucleation, is not conducive to the growth of diamond grains; higher microwave power and low deposition pressure is conducive to obtaining a larger volume of plasma ball, l a large area of ??high microwave power can effectively improve large area CVD diamond film deposition rate; high concentration of the carbon source is not conducive to a large area CVD diamond film grain growth, through the precise control of the concentration of carbon source, you can get different orientation CVD diamond films. The preparation of the master various process parameters investigated based on the orientation of the large area CVD diamond film as well as a large area of ??high flatness nanocrystalline diamond film. Obtained through the optimization of the deposition process, a better quality of a large area was columnar growth micron diamond film (Ф = 100mm), and high flatness of a large area nano-diamond film (Ф = 100mm), wherein the large area micron CVD diamond film growth rate was 1.3μm / h; high flatness of the large area of ??nano-diamond film growth rate of 0.3 μm / h, and the surface roughness was 21.8nm, and the average grain size of 24.9nm. Through the study, to master the general law of large area CVD diamond film suitable for deposition on the new MPCVD device, the preparation of high-quality diamond film provides a good experimental basis for a large area, and various process parameters on a large area CVD diamond impact analysis of film deposition also provide a theoretical reference for high-quality CVD diamond film deposition.

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CLC: > Mathematical sciences and chemical > Physics > Solid State Physics > Thin Film Physics > Film growth,structure and epitaxy
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