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Study of Oxide Heterojunction Devices Fabricated by PLD

Author: WangJinSheng
Tutor: LiangQi
School: Hefei University of Technology
Course: Microelectronics and Solid State Electronics
Keywords: ZnO NiO Cu2ZnSnS4 PLD
CLC: TN304.055
Type: Master's thesis
Year: 2012
Downloads: 29
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Abstract


Metal-oxide semi conductor is considered to be the material that canexpand the function of silicon-base d devices. ZnO is a very popularoptoel ectronic materi al in the past decade, and ZnO-based heterojunctiondevices have a good prospect in photoelectric detection,el ectr ol umi nescence and sol ar cell.In this thesis, the structur e, pr operties and resear ch pogress of ZnO,NiO and Cu2ZnSnS4（CZTS） were described. The deposition techniques ofthin fil ms （Pulse Lase r Deposition, Magnetron Sp uttering, Electron BeamEvaporation） and the characterization methods of thin films and devi ceswere introduced. ZnO, NiO and CZTS targets were pr epared. ZnO, NiOand CZTS thin films were prepared on Si substrates by PLD. Thecrystalline structure and surface morphology of the films werecharacterized.n-ZnO/p-NiO heterojunction was fabricated on Si（111） by PLD. Thecontact of metal and semiconductor was studied, a nd Ti electrodes of thedevice were prepared by electron bea m evaporation. The surfacemorphology of ZnO thin fil ms wa s charaterized by AFM, the I-Vcharacterist ic of n-ZnO/p-NiO heterojunction was test ed. The idealityfactor of the device is4, the device responds fast to light.CZTS/ZnO and CZTS/ZnO/AZO devices were fabricated on Si（100）by PLD, and Mo electrodes of the devi ce were pr epared by magnetronsputtering. The I-V characterisitics of the devi ce were tested, and thechange of the characteri stics when the thickness of ZnO layer changedwas studied. The results show that t he I-V char acteri sti c o fCZTS/ZnO/AZO devi ces is better when ZnO layer is thinner, and theinfluence of series resist ance is smaller.

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > General issues > Material > General issues > > Semiconductor thin film technology
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