Dissertation > Excellent graduate degree dissertation topics show

Research on Organic Resistive Memory Devices Fabrication and Characteristic

Author: LiuXin
Tutor: DaiYueHua；LiuMing
School: Anhui University
Course: Microelectronics and Solid State Electronics
Keywords: Organic resistive memory Deposition and patterning 8-hydroquinoline aluminum Nanoparticles dopant Oxotitanium phthalocyanine Interface effect
CLC: TP333
Type: Master's thesis
Year: 2011
Downloads: 46
Quote: 0
Read: Download Dissertation

Abstract


With the rapid development of information technology, the market demand for low-cost, lightweight and flexible electronic products is growing. However the development of the traditional inorganic semiconductor devices and circuits is gradually approaching the size and cost reduction limit. Organic semiconductor material, known for its unique advantages of low-cost, lightweight and flexibility, has stood out among next-generation semiconductor technologies. In this thesis, the resistive switching organic memory devices are investigated in light of materials, fabrication process and electric characteristics, respectively. The main contents are as follows:Firstly, compared with the traditional inorganic silicon-based electronics, the development of organic electronics as well as the research progress of organic memory are summarized.Secondly, as the key fabrication processes for organic devices, the formation and patterning of organic semiconductor thin films are explored. Vaccum evaporation, solution-processed, organic vapor phase deposition, L-B method and electrochemical polymerization are used for organic thin films deposition due to their special characteristics. The commonly used methods for organic thin films patterning include: shadow mask, inkjet printing, stamp printing and screen printing technology.Thirdly, metal nanoparticles doped resistive memory devices based on Alq3 are fabricated, and their physical and electrical characteristics were analyzed. The Alq3 based thin film memory device doped with Au nanoparticles has not been reported, we take Al and Au for metal nanoparticles dopant respectively. The morphology and distribution of Au nanoparticles are characterized through scanning electron microscopy (SEM) and Auger electron spectroscopy (AES). It is found that the devices don’t display bistable switching unless the metal dopants perform as discontinuous granular layer.Finally, TiOPc based single-component and Au nanoparticles doped resistive memory are investigated. There is still no report about the TiOPc based metal nanoparticles doped resistive memory. For comparison, devices with different top-electrodes are also prepared for the switching mechanism analysis. It is concluded that, both the TiOPc/Al interface effect and Au nanoparticles dopant will play an important role on the devices switching properties, and the device electrical performance will be better improved with interface and dopant working simultaneously.

Related Dissertations

  1. Study on Electrocatalytic Reduction of Oxygen and Photoconductivity of Phthalocyanines,O621.2
  2. Electronical Properties of Low-dimensional Nanostructured Systems and Stress Effects,O482
  3. Effects of Size and Pressure of Nanocrystals,TB383.1
  4. The Study of the Physical Properties of Ferroelectric Multilayer Structure,O482
  5. Research of Fine-grained PTC Ceramic and Co-sintering Technology with Nickel Electrode,TN304
  6. Research on Reversible Resistance Switching of Perovakite Metal Oxides Thin Films at Room Temperature,TN304
  7. Synthesis and Growth Mechanism of Carbonates Under Synergetic Control of Polyelectrolyte and Interface Effect,TB383.2
  8. Influence of Magnetron Sputtering Techniques on the Micro Structure and Giant Magneto-impedance Effect of the Composite Wires,O482.5
  9. Investigation of Condensation Heat Transfer Enhancement for the Self-Assembly Monolayer Surfaces,TQ021.3
  10. Experimental Investigation of Steam Dropwise Condensation Heat Transfer at Low Pressure,TK124
  11. The Resistive Switching of Pr0.7Sr0.3MnO3 Thin Films at Room Temperature,TM564
  12. Effect of Surface/Interface on the Dynamic Stress in Nano Composites,TB383.1
  13. Mn-based perovskite oxide with a different magnetic phase of composite and Its magnetic with the electronic transport properties of research,O482.5
  14. Interficial Effects and Related Physical Characteristics of Organic Light-emitting Devices,TN383.1
  15. Ferroelectric film interface effect and size effect of,TM221
  16. The Mechanical Properties of Viscoelastic Materials with Inclusions Considering the Surface/Interface Effect,TB301
  17. Low Power SRAM Design Based on Data Retention Voltage (DRV) Scheme,TP333
  18. Research and Circuit Imp. of SRAM Soft-Error Detection and Correction,TP333.8
  19. Stability of the SRAM Cells for Deep Sub-micron Technologies,TP333
  20. Energy-Efficient Computing for Storage Sub-system,TP333
  21. Research on the Storage of Condensed Cube Based on Flash Memory,TP333

CLC: > Industrial Technology > Automation technology,computer technology > Computing technology,computer technology > Electronic digital computer (not a continuous role in computer ) > Memory
© 2012 www.DissertationTopic.Net  Mobile