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Preparation and Properties of ZnO-based Thin Flim Transisitors

Author: JinLi
Tutor: GuoJian
School: Xiangtan University
Course: Microelectronics and Solid State Electronics
Keywords: sol-gel Pulsed Laser Deposition semiconductor oxide thin filmtransistors saturation current
CLC: TN321.5
Type: Master's thesis
Year: 2013
Downloads: 75
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Abstract


The development tendency of display technology goes on a intelligent, flat panel,and energy-saving road. The active array driver display with TFT（thin film transistor）as switching element stands out from plenty of flat displays. More and moreresearchers are focusing on semiconductor oxide thin film transistors because of itslow fabricating temperature, high mobility ratio, light transmission, and environment-friendly characteristics. And it is believed to be the mainstream display of nextgeneration. In the thesis, I have studied the ZnO-TFTs, and the main results are asfollowing.1. I have made amount of investigation on ZnO-TFTs and known about thecurrent research status through reading a number of relevant literatures. I also foundsome problems of the project and obtained their solution methods.2. Li-doped ZnO（ZLO） films were prepared by sol-gel technique on n-typesilicon. With ZLO films as channel layers, bottom gate thin film transistors werefabricated. The XRD results showed the ZLO films were wurtzite structure withc-axis orientation at the heat-treatment of500℃. The SEM experiments indicated thatthe ZLO films were uniform and the grain size was about25nm. The I-V property ofZLO-TFTs implied the devices were n-channel enhanced thin film transistors. ZLO-TFTs have a good saturation performance. When VGis12V, IDis about4μA.3. ZTO films were prepared by sol-gel technique on n-type silicon. With ZTOfilms as channel layers, bottom gate thin film transistors were fabricated. The XRDand SEM results showed the ZTO films were smooth amorphous thins without holesand cracks.4. BNT or HfO2、ZAO films were prepared by Pulsed Laser Deposition on n-typesilicon and Pt substrates. With ZTO films as channel layers, and BNT/SiO2or HfO2/SiO2films as channel layers, ZAO-TFTs were prepared. The XRD and SEM resultsshowed the ZAO films were smooth crystalline thins without holes and cracks. Thefabricated ZAO-TFTs, which feature a bottom-gate and use HfO2/SiO2as gatedielectric films, exhibited a30times larger saturation current.

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > Semiconductor transistor ( transistor ) > Transistor: according to the process > Thin-film transistor
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