Dissertation > Excellent graduate degree dissertation topics show

Design and Fabrication of SOI High Temperature Pressure Sensor

Author: WangWei
Tutor: XiongJiJun; LiangTing
School: University of North
Course: Physical Electronics
Keywords: pressure sensor SOI high-temperature resistance MEMS fabrication process
CLC: TP212
Type: Master's thesis
Year: 2014
Downloads: 6
Quote: 0
Read: Download Dissertation

Abstract


In high temperature harsh environment, due to the mechanical structure’s degradationand the metal leads’ invalidation, the real-time dynamic measurement of of pressure sensor isunable to carry out. It is necessary to design the high temperature pressure sensor, using thematerial remains stable in high temperature, from the sensitive chip to metal leads and to thepackage tube. Hence overall the design, high-temperature resistant structure must befabricated to ensure that the pressure sensor is capable of operating stably in high temperatureharsh environmentThe problem, the reverse of PN junction, caused by the intrinsic excitation of thesemiconductor in high temperature, was solved using the SOI material. Then the stability ofthe mechanical properties and reliability of the mechanical structure of sensitive head isguaranteed with the MEMS fabrication process. Through high temperature metal materialsas the metal wire material, the packaging of the pressure sensor can withstand hightemperature in the harsh environment. And using the ceramic which thermal expansioncoefficient is similar to the sensor of sensors as the package tube, thepressure sensor’s thermal stress is reduced,and the stability of pressure sensor is improvedin high temperature harsh environment.With to the high temperature pressure sensor designing principles above, parallelingtheoretics with simulation, and studying the various structure part of the sensor, the designwas worked out for the various parts of the sensor in harsh environment. After the MEMSfabrication process and packaging, the prototype of high temperature pressure sensors wasfabricated. And the performance parameters and operation maximum temperature of the SOIhigh temperature pressure sesor in this paper were obtained according to the test results.Thiswork provided reference for the design of more high temperature pressure sensor.

Related Dissertations

  1. Comprehensiv Evaluation of the Tolerance of Sweet Cherry Drafted on Five Different Rootstocks under Drought, Waterlogging and High-Temperature Stress by Subordinate Function Values Analysis,S662.5
  2. Research on Intelligent Vacuum Suction Device Based on MB95F204K,R472
  3. Study on Structure and Properties of Aramid Spunlaced Nonwovens,TS176
  4. Design and implementation of the multi-channel pressure sensor auto-calibration system,TP212
  5. The Research of Nanometer Waveguide Fabricated on SOI and the Fabrication Process,TN252
  6. The Electrical Safe Operation Area and Thermal Safe Operation Area of SOI LDMOS,TN386
  7. Breakdown Theory of SOI Lateral Super Junction Devices,TN303
  8. Study on Silicon Photonic Wire Arrayed Waveguide Grating (AWG),TN252
  9. Optimal Design of Silicon Waveguides for High-Efficiency Broadband and Polarization-Independent Wavelength Conversion,TN252
  10. Investigation of SPR Waveguide Sensor Based on Angular Interrogation,TN256
  11. SOI-based materials research and design of micro-pressure sensors,TP212
  12. Diaphragm fiber EFPI Sensor,TP212
  13. Study of Optical Implementation and Integrated Technology of Free-Space Optical Interconnection Network,O438
  14. SOI preparation of the oxygen ion implanted defect in the control and study,TN305.3
  15. New SOI-LDMOS structure design and research,TN386
  16. Integrated Measurement for Density and Viscosity of Heavy Medium Suspension Based on Differential Pressure,TD94
  17. The Realization and Application of Multi-channel FLRDS Sensor,TP212.14
  18. Research on Realtime Calibration System of Pressure Sensor in MWD,TP212.12
  19. Inhibition of the end effect of EMD method,TN911.7
  20. Based on self- isolation technology can be integrated SOI high voltage (> 600V) devices,TN386
  21. The Non-quasi-static Effect Involded in MOSEFET, SOI Moseft and LDMOSTE,TN386

CLC: > Industrial Technology > Automation technology,computer technology > Automation technology and equipment > Automation components,parts > Transmitter ( converter),the sensor
© 2012 www.DissertationTopic.Net  Mobile