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Fabrication and Structural Characterization of Large Grain Polycrystalline Silicon Films

Author: ZhangLei
Tutor: PengYingCai
School: Hebei University
Course: Microelectronics and Solid State Electronics
Keywords: solar cells polycrystalline Si films large sized grain LPCVD HFCVD structural characterization electrical property
CLC: O484.1
Type: Master's thesis
Year: 2008
Downloads: 13
Quote: 0
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Abstract


The polycrystalline silicon (poly-Si) thin-film solar cells are becoming a very active research area, and the use of polycrystalline Si films with large grains can enhance energy conversion efficiency of the solar cells. In this work, large grain polycrystalline silicon thin films have been deposited on SiO2 substrate by low pressure chemical phase deposition (LPCVD) and high frequency induction-heated chemical phase deposition (HFCVD). The effect of the substrate temperature, reactive pressure and SiH4 concentration on growth rate and grain size of the deposited films are studied by scanning electronic microscopy (SEM) and a-step apparatus. It is found that the grain sizes of large grain polycrystalline silicon films and are 1～2μm at typical experimental conditions. Furthermore, doping of the films is achieved by post-diffsion method, and the effects of doping time, doping and annealing temprature on sheet resistance are studied. It is confirmed that annealing temperature is important for electrical properties of the films. At the annealing temperature of 900℃, the sheet resistance is 121Ω/□. With increasing annealing temperature, sheet resistance would be reduced. At the annealing temperature of 1100℃, sheet resistance is 38Ω/□, this is due to the more impurity are actived at higher temperature.

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CLC: > Mathematical sciences and chemical > Physics > Solid State Physics > Thin Film Physics > Film growth,structure and epitaxy
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