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Optimization Design of Vacuum Microelectronic Triodes

Author: XuMingLi
Tutor: PiDeFu；JiangLi
School: Nanjing University of Technology and Engineering
Course: Communication and Information System
Keywords: Field emission Finite Element Method Flat Panel Display Vacuum microelectronics triode Computer simulation
CLC: TN112
Type: Master's thesis
Year: 2009
Downloads: 18
Quote: 0
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Abstract


In this paper, vacuum microelectronics progress in the research field emitter array FEA , field emission display FED , vacuum microelectronics microwave and millimeter wave devices , such as the development process , focus on the special requirements of the relevant devices on FEA possible the solution to the problems , and discusses the main content and significance of the development of the vacuum microelectronics technology , the last reference to the effective development of vacuum microelectronic devices that require attention problems . Emission theory on the basis of in -depth study of the field of vacuum microelectronics devices caused the characteristics of the transistor according to the wedge-shaped cathode vacuum microelectronics , to establish the physical and mathematical models based on finite element method using the premise of considering the impact of the space charge density iterative method calculated vacuum microelectronics triode potential distribution drawing showing the equipotential lines , the electron trajectory line, and the electrical properties of the device with the changes in the geometric parameters of the situation . After careful analysis of the simulation results , combined with the characteristics of the semiconductor microfabrication range of process conditions allow a more complete set of vacuum microelectronic transistor optimization design .

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Vacuum Electronics > Tube > Transistor
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