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Ferroelectric materials because of its non-volatile ferroelectric memory in the application and received widespread attention. As microelectronics technology and the development of highly integrated devices, people ferroelectric nanomaterials generated great interest. Bi 3.15 Nd 0.85 Ti 3 O 12 (BNT) has excellent ferroelectric properties, is considered the most Hopefully applied to non-volatile ferroelectric memory ferroelectric material lead. This paper mainly for the production of experimental preparation and characterization of non-volatile ferroelectric memory BNT nanostructures. On the one hand, with a chemical solution deposition (CSD) were prepared by different film thickness BNT ferroelectric thin films studied BNT thin film thickness on the microstructure and electrical properties; hand, prepared by electrospinning BNT nano fibers, and studied the BNT nanofibers microstructure and electrical properties; same time, using Landau theory BNT nanofibers Curie temperature and electrical properties were studied. Specific work and results are summarized as follows: 1. BNT ferroelectric thin films and properties of CSD method first used in the Pt (111) / Ti/SiO2/Si (100) substrates by the thickness of 160nm, 240nm, 320nm , 480nm and 640nm of BNT film. Then using a scanning electron microscope (SEM), X-ray diffraction (XRD) and Raman spectra were characterized with different thickness BNT ferroelectric thin film microstructure and residual stress. The results show that, BNT formed between the film and the substrate interface layer of low dielectric constant; BNT film grain size and residual stress not change significantly with the film thickness; BNT ferroelectric performance over the film thickness reduced deteriorates, which may be due to a relatively thin film, when the interface layer is a result of the more obvious effect. 2. BNT ferroelectric nanofibers and Microstructure studies by containing polyvinyl pyrrolidone (PVP) with a mixed solution of BNT static stretching in Si (100) substrates by the BNT / PVP composite fiber, and then respectively at 5000C, 6000C, 7000C, 7500C, and 8000C calcined BNT hours to give crystalline nanofibers. Using SEM, XRD and Fourier transform infrared spectroscopy (FT-IR) on BNT nanofiber morphology, structure and composition were analyzed. Experimental results show that with the increase of the calcination temperature, BNT nanofiber diameter gradually decreases, the crystallinity is improved. The resulting calcined BNT above 6000C nanofiber Bi layer was polycrystalline perovskite structure, a diameter of 70nm-160nm, length of about 6μm. However, upon calcination 8000C, BNT nanofibers in the crack. In the electrospinning process, based on, and optimized by changing the type of the solvent spinning process such as electricity, in the Si (100) and Pt (111) / Ti/SiO2/Si (100) substrates by the BNT / PVP composite fiber , then respectively 6000C, 7000C and 8000C and calcined BNT 1.5 hours to obtain the crystals nanofibers. And by XRD, Raman spectroscopy and transmission electron microscopy (TEM) on the microstructure of BNT nanofibers were characterized. The results show that by optimizing the electrospinning process BNT nanofibers were prepared bismuth layered perovskite structure, high temperature calcined BNT nanofibers did not have a fracture, in good shape. 3. BNT ferroelectric properties of nanofiber using the scanning probe microscope, respectively, and thermal analyzer spinning process by optimizing the electrical BNT nanofibers prepared by the Curie temperature and the piezoelectric coefficients were analyzed results show that the nanofiber BNT ferroelectric properties, and its piezoelectric coefficient and Curie temperature higher than the BNT films. Calculated theoretically using Landau BNT nanofibers Curie temperature and polarization, the results showed that, BNT nanofibers having a high Curie temperature and the polarization is caused by surface tension, while a high dielectric constant and polarization strength nanofibers BNT piezoelectric coefficient having a large two important reasons.
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