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Preparation and Physical Properties of P-Type Transparent Conducting Oxide CuAlO2 Thin Film

Author: ZhaoFanGui
Tutor: YangBin
School: Harbin Institute of Technology
Course: Condensed Matter Physics
Keywords: Ceramic conductivity CuAlO2 film Transmission spectrum PLD method. Magnetron sputtering.
CLC: O484.1
Type: Master's thesis
Year: 2009
Downloads: 75
Quote: 1
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Abstract


A transparent conductive oxide (TCO) having a high conductivity, high transparency in the visible range at the same time, through donor doping In2O3, ZnO, and SnO2 TCO materials have been widely used in flat panel displays, solar cells, a transparent electrode, and a transparent The thin film transistor and the thin film photovoltaic device. Its conductivity of approximately 104 S / cm order of magnitude, but the above-described materials are n-type conductivity material, while the p-type transparent conductive oxide material is very small, and its conductivity is low compared with the n-type TCO material 3-4 orders of magnitude, it is difficult to achieve as a basic structure of the actual application of the device to the pn. Japanese Kawazoe Professor of 1997 for the first time by the PLD method was prepared out of the p-type transparent conductive CuAlO2 film having a delafossite structure, more significant to improve the conductivity of the film, the results promote the p-type transparent conductive oxide material development. P-type conductivity of the material, how to further enhance and improve the repeatability of its nature to become the focus of important research direction. Preparation and Properties of different doping state CuAlO2 ceramics were studied, and the use of different methods of preparation and properties of the thin film of CuAlO2 initial exploration. Study with Cu2O and Al2O3 powder prepared by conventional solid-state reaction ceramic samples. XRD structure analysis showed that all of the diffraction peaks the undoped CuAlO2 targets from CuAlO2 phase, belong to the space group R-3m, not found from CuAl2O4, Cu2O and Al2O3 phase diffraction peak. Then by doping a divalent metallic element such as Mg2, Ca2 introduced into the CuAlO2 structure, XRD structure analysis showed Mg2, Ca2 substituted trivalent metal cation CuAlO2 structure of Al3. Electric double measured four-probe tester conductivity of ceramic samples, the results show that the conductivity compared to undoped CuAlO2 sample is significantly improved, which 1? O and 1% MgO to doping CuAlO2 target conductivity a magnitude. In addition, by doping Sc3 CuAlO2 structure of Al3 substituted, Hall coefficient is positive Description SC doped CuAlO2 ceramic is a p-type semiconductor material, to improve the carrier mobility decreases with the doping ratio, and carrier concentration first increased, then decreased, and the two together under the influence of conductivity first increased and then decreased. By the PLD method on the sapphire substrate successfully prepared CuAlO2 of film, the thin film XRD structure analysis showed mainly CuAlO2 phase, and the (110) plane orientation of a peak strong. By comparing different substrate temperature XRD patterns of different oxygen atmosphere pressure under the film substrate temperature higher than 500 oC, the oxygen conditions more favorable CuAlO2 of film into a phase. UV - visible spectrophotometer studied the transmission spectrum of the thin film, compared to the transmission spectrum found high transmittance of the film under the conditions of high oxygen pressure, so choose the appropriate partial pressure of oxygen is an important condition for the preparation of such materials film. Magnetron sputtering on sapphire substrates the prepared CuAlO2 film. The substrate temperature and the partial pressure of oxygen on the film structure, by comparing the different substrate temperature and oxygen partial pressure of the XRD pattern of the thin film and found that the temperature is lower than 600 ° C, more favorable CuAlO2 film into a phase of anaerobic conditions, and film shows a strong (006) orientation. The surface morphology of the film was characterized by SEM, the results showed that the film surface is smooth, the particle diameter is between 80 to 120 nm, in the 400-1500 nm band of the average transmittance of the film rate reached 80%, obtained by fitting the direct band gap of 3.81 eV.

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CLC: > Mathematical sciences and chemical > Physics > Solid State Physics > Thin Film Physics > Film growth,structure and epitaxy
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