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Optical Properties of Hydrogenated and Li Doped ZnO Thin Films

Author: ZhangYanJie
Tutor: WangJinBin
School: Xiangtan University
Course: Microelectronics and Solid State Electronics
Keywords: ZnO thin films Hydrotreating Cathodoluminescence Li doping Ferroelectricity
CLC: TN304.2
Type: Master's thesis
Year: 2009
Downloads: 54
Quote: 0
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Abstract


ZnO is a new type of a wide bandgap II-VI compound semiconductor materials , zinc blende structure with hexagonal brazing , at the same time , it is a unique material with photoelectric , piezoelectric properties . In particular, because of its large band gap (3.37 eV ) , the exciton binding energy (60 meV ) , room temperature with efficient exciton by the excitation light , so in the field of short-wavelength optoelectronic devices , ZnO has great potential for the application of such as light-emitting diodes (LEDs) and lasers (LDs) . To achieve widely in the field of optoelectronic applications of ZnO , must first get the good performance of the n-type and p-type ZnO material . However , due to the influence of the defects , the lower the luminous efficiency of ZnO . Although control the defect for ZnO light-emitting efficiency is important, but the defects related to the electron - hole recombination mechanism is not yet clear . In this paper, atomized vapor deposition method to prepare ZnO Films analyze different substrate temperature and annealing atmosphere on ZnO surface morphology and luminescent properties , found 2.39 eV at the origin of the green emission peak oxygen vacancies have a close relationship . Pulse modulated plasma furnace hydrogenation treatment ZnO film, to change the distance between the sample with plasma hydrogenation , the analysis of the impact of the hydrogenation treatment of luminescent properties . CL spectra at room temperature showed that the hydrogenation treatment is possible to improve the efficiency of ultraviolet light emitting (3.27 eV), and the light emitting efficiency of the amplitude and the hydrogenation conditions closely . Reduced when the distance is reduced from 90 mm to 75 mm , the ultraviolet light-emitting and green luminous intensity increased . The low temperature the CL tests found to become the dominant luminescence band of ZnO samples hydrotreated , 3.315 eV emission peak . The study showed that the hydrogen and the intrinsic defects can be formed shallow donor complex , increase the concentration of the shallow donor , have a great significance for improving the efficiency of the ultraviolet light emitting . In chapter 5, Li -doped ZnO polycrystalline thin films prepared by the sol - gel method . The samples were kept brazing blende structure . The CL test at room temperature with Li doped concentration increases , the non - radiative recombination center concentration increases, the luminous efficiency of the sample is reduced . By analyzing the CL spectra of samples at low temperatures , 3.28 and 3.31 eV two emission peak attributed to LiZn LiZn-Lii acceptor bound exciton transition . The the Zn1-xLixO film (0.08 ≤ x ≤ 0.12) has a room temperature ferroelectric hysteresis loops the the lithium zinc replacement and lithium complex cause Li - doped ZnO thin film ferroelectric reason .

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > General issues > Material > Compound semiconductor
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