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Studies of Vanadium in SiC by SIMS

Author: HeYouQin
Tutor: YaoSuYing；HeXiuKun
School: Tianjin University
Course: Electronics and Communication Engineering
Keywords: SiC vanadium compensation SIMS
CLC: TN304.24
Type: Master's thesis
Year: 2009
Downloads: 67
Quote: 0
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Abstract


Silicon carbide (SiC) has a wide bandgap, high breakdown electric field, high thermal conductivity, high saturated electron drift velocity. All these characteristics combine to make it a candidate of choice for high-frequency, high-power, high-temperature,high radiation, chemical hazards and low-loss device applications.In recent years ,with the improvement of the SiC semiconductor technology, high resistivity, semi-insulating SiC single crystals are gaining more and more importance in many applications related to high power device,deep submicron device,and micromave power device technology. Semi-insulating regions can also be applied for devices isolation or junction termination which is very important for improving the permances of devices. In addition,high resistivity SiC single crystals are needed as substrates for high frequency electronic devices based on both SiC and GaN because of their low dielectric losses in the GHz range and the high thermal conductivity.Semi-insulating SiC can be obtained by doping with compensating impurity vanadium. So it is necessary for achieving good perfermance ,low defect SiC devices to controle the content of vanadium.In this paper , SiC materials characteristics, bulk crystal growth, the connection of SiC materials electrics and calorifics character with SiC devices perfermance are studied theoretically. The main studies and contributions of this dissertation are as follows.(1) Detailed investigation of the compensation mechanism and physical properties of semi-insulating SiC doped with vanadium are presented.(2) The test principle of Secondary Ion Mass Spectrometry (SIMS) is studied, two reference materials by ion implanting combing the bulk crystal growth are prepared, and a quantitive test method is provided. This method has solved the problem of quantification measurement of vanadium to a great extent and offered great help to the study of semi-insulating SiC.

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > General issues > Material > Compound semiconductor > Ⅳ - Ⅵ compound semiconductors
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