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C-band LNA design

Author: YanLanFang
Tutor: ZhangYuXing
School: University of Electronic Science and Technology
Course: Circuits and Systems
Keywords: Broadband LNA Equilibrium structure HEMT Lange coupler
CLC: TN722.3
Type: Master's thesis
Year: 2010
Downloads: 233
Quote: 1
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Abstract


Located at the receiver's front - end low-noise amplifier (LNA) is of the key components of the receiving system , and the noise figure of the key indicators to measure the low-noise amplifier , which determine the noise performance and sensitivity of the entire reception system . Developed C-band and wideband low noise amplifier with a low noise figure and standing waves , work in the 4.7GHz ~ 6.7GHz frequency range , with good market prospects . This paper first introduces the basic theory of the low-noise amplifier , the implementations of the C-band low noise amplifier , select the appropriate transistor . In this issue , using the die of the high electron mobility transistor (HEMT) . The high electron mobility transistor can achieve low noise and high power gain at high frequencies , but the packaging parameters of the tube will bring great impact on the low-noise amplifier , so that the choice is not encapsulated the HEMT die . Two-stage amplification of the amplifier circuit to achieve first stage equilibrium structure , connected by 3dB Lange bridge . This paper first introduces the the transistor matching network design , including input matching network for the purpose of minimum noise , and maximum transmission power gain for the purpose of output matching network , then Lange bridge design steps detailed in this article , as well as expansion of the bridge the operating bandwidth completed Lange bridge design, and finally , in the second stage of the low noise amplifier using the matching network is designed for a maximum power transmission matching . Then design the bias circuit of the DC power supply circuit , the overall design of simulation on the design of the C-band low noise amplifier LNA printed circuit board layout , made ??into a PCB board by Protel software simulation schematic AutoCAD designed LNA cavity design . Final commissioning of the processing back board , the final test result is close to the development objectives of the subject in the operating frequency range : the low-noise amplifier achieved noise figure less than 1.6dB , VSWR less than 1.3dB gain greater than 24.5 dB, and the in-band gain ripple less than 1dB .

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Basic electronic circuits > Amplification technology,the amplifier > Amplifier > Low-noise amplifier
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