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Growth of Cr4+:YAG Crystal and Analysis on Defects
Author: ZhaoXiaoHong
Tutor: WangXiaoChun;XuXueZhen
School: Changchun University of Science and Technology
Course: Materials Physics and Chemistry
Keywords: Cr4 : YAG pulling method Crystal growth Annealing Absorption coefficient
CLC: TN244
Type: Master's thesis
Year: 2010
Downloads: 69
Quote: 0
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Abstract
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1um band the most widely used one of the Q-switched Cr4 : YAG crystal has a high thermal conductivity and laser damage threshold . In this thesis, medium frequency induction Czochralski method co-doped calcium and magnesium ions Cr4 : YAG crystal , the temperature field system , the optimization of the growth process parameters , to overcome the internal defects of the crystal side of the heart , and switch to automation growth equipment , crystal diameter of 50mm, and shape control ideal ; Cr4 : YAG crystal internal defects ( large side of the heart, needles , etc.) and its absorption coefficient Characterization of the Cr4 : YAG crystal preparation process parameters on the quality and performance affected. For Cr , Ca , Mg ion doping concentration and the proportion of the optimization and atmospheric annealing process reduces the crystal absorption coefficients of longitudinal and radial gradients . Growth test : Cr4 : YAG crystal internal defects and the unstable absorption coefficient with the temperature gradient of the temperature field and the doping ratio and other factors .
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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Photonics technology,laser technology > Laser technology, the maser > Laser materials and substances
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