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Three-dimensional Thermal Simulation and Structure Design of Phase Change Access Random Memory

Author: SunJinJie
Tutor: ZuoXiangShui
School: Huazhong University of Science and Technology
Course: Microelectronics and Solid State Electronics
Keywords: Phase change random access memory Three-dimensional Finite Element Analysis Electric heating ANSYS T- structure Asymmetric structure
CLC: TP333.8
Type: Master's thesis
Year: 2011
Downloads: 12
Quote: 0
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Abstract


The superiority of phase - change random access memory makes it a great potential of the new generation of nonvolatile memory . A storage function of the phase-change random access memory , is generated by applying electrical pulses with different heat, such that having a low resistivity of the crystalline state and amorphous state of high impedance conversion of the two states of the phase change material between two states achieved . Therefore, phase change random access memory of the electrothermal effect is essential , particularly when the feature size decreases gradually . Based on the principle of finite element analysis using finite element analysis software ANSYS established phase change random access memory unit three-dimensional model , and its electrothermal simulation under a range of parameter changes . Change a characteristic size of the T-shaped structure of the phase change of some of the material parameters of the storage unit (including the phase change material , electrode material , the thermal conductivity of the material of the spacer layer and the phase change material resistivity ) , some rules and analysis; the characteristic size of the analog memory unit on the temperature distribution ; then to the phase change means of the feature size of 100 nm as a reference scaling the phase change memory cell to obtain a different feature sizes (45nm , 32nm, 22 nm, 16nm and 10nm) key structural parameters ( phase change layer thickness , spacer thickness , etc.) on the temperature distribution . Reset the current is too large has been one of the reasons for restricting the phase change random access memory development . This paper presents a novel asymmetric structure . Dimensional electrothermal simulation and compared with the T-type structure , the structure can increase the current density within the phase change means to reduce the temperature dissipation , and therefore possible to reduce the Reset current . Then different feature size ( 45nm , 32nm, 22nm , 16nm and 10nm) the structure of some of the key parameters ( phase change layer thickness , offset ) has done a series of simulation to observe their asymmetric structure phase transition unit temperature distribution identify the structural parameters can give full play to the advantage of asymmetric structure . In addition , comparing the T- structure and asymmetric structure phase transition unit differences , identify asymmetric structure better than the T- structure discovery scaled down under the same conditions , the asymmetric structure of low -power superiority is more obvious , has important implications for high-density storage .

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CLC: > Industrial Technology > Automation technology,computer technology > Computing technology,computer technology > Electronic digital computer (not a continuous role in computer ) > Memory > Random Access Memory
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