Dissertation > Excellent graduate degree dissertation topics show

Fabrication and Characteristics of the One-dimensional N-doped β-Ga2O3 Nanowires

Author: LiuLingLing
Tutor: LiMengZuo
School: Liaoning Normal University
Course: Condensed Matter Physics
Keywords: β-Ga2O3 nanowires Semiconductor material Nitrogen doping CVD method
CLC: TB383.1
Type: Master's thesis
Year: 2010
Downloads: 44
Quote: 0
Read: Download Dissertation

Abstract


As ammonia (NH3) gas is used as dopant source, the undoped and N-doped B-Ga2O3 nanowires (NWs) were successfully fabricated with chemical vapor deposition (CVD) method on (111) Si substrates. The microstructure, morphology and element composition of the samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray (EDX) and room-temperature photoluminescence (PL), respectively. Through control variate method, the best experimental parameter were available. And experimental result showed that the high quality N-doped B-Ga2O3 NWs can be attained as Au-coated Si substrates were loaded downstream with the deposition temperature was from 700 to 850℃as NH3 (99.999%) were introduced to the system with 40 ml/min flow rates for 1 or1.5 h. The investigations revealed that the single-crystalline N-dopedβ-Ga2O3 NWs are straight and smooth, with diameters ranging from 35 to 120 nm and length up to several tens of micrometers. Each NWs terminated in Au nanoparticle at the tip indicates that N-dopedβ-Ga2O3 NWs followed the vapor-liquid-solid (VLS) growth mechanism.The results showed that B-Ga2O3 NWs doping with N can create various kinds defects such as VO,VGa VGa:Vo and No, and these results induce that the PL spectra of N-dopedβ-Ga2O3 NWs is different from that of undoped sample. However phase separation ofβ-Ga2O3 and GaN haven’t generated until the flow rate of NH3 reasech to 40 ml/min. PL spectrum measurements exhibited that N-dopedβ-Ga2O3 NWs had ultraviolet (UV), blue and green emission peaks because of N-doped process. The PL mechanism of N-dopedβ-Ga2O3 NWs is also discussed.Furthermore, micro-scale undopedβ-Ga2O3/N-dopedβ-Ga2O3 homojunction structures were fabricated. In the testing process, a single N-dopedβ-Ga2O3 microwire and undopedβ-Ga2O3/N-dopedβ-Ga2O3 microwire homojunction were connected by Pt electrode in the both ends. The IV property of the fabricated N-dopedβ-Ga2O3 microwire andβ-Ga2O3/N-dopedβ-Ga2O3 microwire homojunction were compared. IV results testified that N-dopedβ-Ga2O3NWs showed a p-type conductivity.

Related Dissertations

  1. Three-dimensional model of diamond growth,TQ164.8
  2. Theoretical Study of some of the organic semiconductor material of the charge transfer performance,TN304.5
  3. GaAs-based HBT epitaxial growth and characterization of materials,TN304
  4. Oxygen Precipitation Behaviors in Conventional and Nitrogen-codoped Heavily Arsenic-doped Czochralski Silicon,TN304.12
  5. Pentacene organic field effect transistor of,TN386
  6. Research of the Growth and Defects of Czochralski Silicon Crystals,TN304.054
  7. Investigations on N-related Doping of ZnO Thin Films and Ohmic Contacts to p-ZnO,TN304
  8. Design, Synthesis and Characterization of Organic Semiconductors Modified by Thiophene,O649
  9. Synthesis and Function Studies on New Benzoporphyrin Compounds,O626
  10. Organic Thin-film Field-effect Transistor, Light-emitting and Display-driving,TN386
  11. The Problems and Countermeasures Analysis in Semiconductor Material Industry’s Cleaner Production,F426.6
  12. Investigation of NiCl2 Catalytic Synthesis of GaN Nanostructures,TB383.1
  13. Flame CVD Preparation of nitrogen-doped nano - titania and its photocatalytic and electrochemical properties of,O643.36
  14. Plasma immersion ion implantation technique in p -type ZnO films modified aspects of applied research,O484.4
  15. Investigation of SnTe-Ge2 Sb 2 Te5 and Bi2 Te3 Based Phase-change Materials for Applications of Phase Change Memory,TP333
  16. Synthesis and Characterization of Semiconducting ZnO and ZnS Nanostructures,O472
  17. Study on Growth and Doping of ZnO Thin Films,O484.1
  18. Study of Sb-Te Based and Sb Based Phase-change Materials for Phase-change Random Access Memory,TP333
  19. Theoretical and Experimental Research on Semiconductor Novel ZnO Nanostructures,O471
  20. N-doped TiO_2 structure and visible light photocatalytic degradation of organics,O643.3
  21. Organic semiconductor carrier transport Monte Carlo simulation,O473

CLC: > Industrial Technology > General industrial technology > Materials science and engineering > Special structural materials
© 2012 www.DissertationTopic.Net  Mobile