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Preparation of Graphene Composite Photoelectric Materials and its Performances

Author: ZhangJia
Tutor: XueMinZuo
School: Shanghai Jiaotong University
Course: Chemical Engineering and Technology
Keywords: graphene N-doping supercapacitor electrochemical properties ogninc solar cell
CLC: TB383.1
Type: Master's thesis
Year: 2012
Downloads: 512
Quote: 0
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Abstract


Graphene,as a two-dimensional nanomaterial with excellent properties, has been received great attention in many areas. In this dissertation,the graphene composite materials have been prepared and studied as electrodematerials in supercapacitor and the n-type semiconductor in heterojunction solar cells(BJHs cells).(1)the graphene materials are prepared by electrophoretic deposition(ED) and thermal-treatment.The result of SEM shows that graphene materials prepared by this method cumulate orderly. And the materials have kept the favourable performances of graphite by XRD、Raman and other measurements. The N-doping graphene have been prepared by ED and centrifugation,and been tested that N-contents in the materials are changed by the dopant by elementary analysis.The reduced graphene material possessed the highest specific capacitance (418F/g). N-doping graphene possessed the good cycling stability and stable specific capacitance.(2) solubility of graphene oxide(GO) and perylene diimide(PDI) in DMF has also been studied. Based on UV-vis absorption spectrum of GO and PDI, the influences of GO/PDI mass ratio and illumination time have been studied, respectively. The results show that graphene have little influence on PDI solution.The efficiency of the BHJ device with GO-PDI as n-typed semiconductor layer is 1.21%, but the devices fabricated without GO only possess efficiency of 0.92%. As n-type materials, graphene has positive effects on the photoelectric conversion efficiency of devices.

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