Dissertation > Excellent graduate degree dissertation topics show

Preparation and Electrical Properties of ZnO/BaTiO3 Hetero-structure Grown by Chemical Solution Deposition （CSD ）

Author: YueMeiQiong
Tutor: WeiXianHua
School: Southwest University of Science and Technology
Course: Materials Physics and Chemistry
Keywords: ZnO Film BTO ZnO / BTO Heterojunction Growth Mechanism Electrical properties
CLC: O484.1
Type: Master's thesis
Year: 2010
Downloads: 47
Quote: 0
Read: Download Dissertation

Abstract


The composite film of the metal - ferroelectric - semiconductor (MFS) because they can be applied to the metal - ferroelectric - semiconductor field effect transistor (MFSFET), non-destructive readout ferroelectric the memory (NDROFeRAM), infrared and ultraviolet color detectors, photovoltaic device and other areas, its preparation process as well as the properties of even more attention. This thesis is based on the liquid-phase method (CSD), around ZnO, BaTiO 3 (BTO) and ZnO-BTO film growth and performance of the system, and made a series of meaningful results, mainly include the following: the study of the growth of ZnO films, the preparation process of the crystal orientation of the ZnO films have a larger impact. Sufficient oxygen in the atmosphere contribute to the growth of ZnO thin films; annealing temperature of 550 ° C 6 50 ° C, could grow c-axis of ZnO thin films with good orientation. With the annealing temperature, the ZnO film c-axis orientation change, but the larger surface roughness; At the same time, the impact of different pretreatment temperature and solvent on the growth of ZnO thin films significant, and in different solvents The growth mechanism is also different. The network structure of the PVA-Zn easy to control (002) with polyvinyl alcohol (PVA) aqueous solution as solvent, the orientation of the ZnO film; glycol methyl ether (MOE) as solvent, the orientation crystallization of the ZnO film is more dependent liner bottom of the surface structure. BTO film growth study shows that the growth of the interfacial properties of BTO films. When the BTO is deposited on the amorphous glass substrate, the film for a variety of alignment coexist; while in the present experimental conditions is hardly deposited on the Pt (111) / Ti/SiO2/Si substrate; deposited on LaNiO 3 (100) / Si (100) substrate is used, showed a good (001) BTO orientation visible the BTO's growth depends on the substrate surface properties. At the same time, when the study of different coating thickness of BTO / LaNiO 3 / Si thin film growth found little effect on the thickness of the film orientation affects only the surface roughness and the average particle size. The optimum use of ZnO, BTO films were successfully prepared the the ZnO / LaNiO 3 and ZnO / BTO / LaNiO 3 heterojunction orientation relationship of (002) ZnO / LaNiO 3 (002) ZnO / (001) BTO / LaNiO 3 ZnO films and BTO films are c-axis crystal orientation of the sample surface is relatively flat, roughness to 10.5nm and 12nm. ZnO film showed that the absorption spectrum (UV-VIS) in the visible region, the transmittance of 80% or more, the band gap is about 3.24eV, the energy band structure of the interested MFS interface state great influence. The BTO film CV curve butterfly curve, low symmetry described thin film memory in more removable electronic or electric charge accumulated at the interface between the film and the electrode within the film to form a built-in bias. MFS structures formed in the the BTO film surface deposition of ZnO thin films, the leakage current than the BTO / of LNO film is still small, an increase of ZnO thin film layer, helps to reduce the leakage current. ZnO / BTO heterojunction CV curve counterclockwise for the the typical MFS CV loop, that mainly generated by the the BTO thin-film ferroelectric polarization rather than electron injection. With the frequency increases, the memory window first increases and then decreases, may be related to minority carrier injection. ZnO / BTO ferroelectric heterostructures Preparation and Properties of verified CSD Preparation of ZnO / BTO heterojunction memory storage can be used at room temperature.

Related Dissertations

  1. Technology of Filling Clearance and Optimizing the Bonds during Ultrasonic Brazing,TG454
  2. Flow Field Numerical Simulation and Performance Analysis for the Conical Hydrostatic Bearing,TH133.36
  3. Numerical Simulation of Film Cooling in Turbine Cascade with Non-Axisymmetric Endwall Method,V231.3
  4. Research on the Dynamics of Rotor-Cylindrical Bearing System and Rotor-Elloptical Bearing System,TK263.6
  5. Research of the Performances of Ferroelectric Film and Compositional-Graded Ferroelectric Film,TM221
  6. TV drama fashion element,J905
  7. A Feasibility Study of IMRT Dosimetric Verification Using Radiochromic Film,R815
  8. Study on the Chimisorption Removal of FCC Gasoline Sulfur Compound,TE624.55
  9. LSGM electrolyte thin films and electrochemical properties of,TM911.4
  10. Modification for PVA-Based Composite Packaging Material with Nano-SiO2 and Its Influence on Fresh Preservation Effect of Salted Duck Eggs,TS253.46
  11. The Preparation and the Properties of the Composite Films from Cassava Starch and Guar Gum,TS236.9
  12. Preparation of Bio-material Liquid Film and Its Applying Effects,S316
  13. Studies on the Physiology and Biochemistry Characteristics and Fresh Keeping Technology of Post-Harvest in Pleurotus Eryngii,S646
  14. Study on the Effect of Natural Antioxidant and Edible Film for Dry-Cured Meat Products,TS251.6
  15. Preparation and Performance Study of the Full-degradable Polythene Films,TQ320.721
  16. Research on the Plasticizers of Starch Sizing Agents,TS103.846.1
  17. Dry Eye Patients Dalian Ophthalmology Out Patient Department Survey,R777
  18. Imidazolium ionic liquids selective electrode and its research activity coefficient,O646
  19. Fluorine silicone acrylate copolymer emulsion synthesis and properties of,TQ316.334
  20. Multilayer coextrusion drooling forming process temperature control technology,TQ320.721
  21. Preparation of ZnO -based microemulsion photocatalytic material,O614.241

CLC: > Mathematical sciences and chemical > Physics > Solid State Physics > Thin Film Physics > Film growth,structure and epitaxy
© 2012 www.DissertationTopic.Net  Mobile