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Study on Photoelectric Characteristics of Amorphous InSb Detector Material

Author: WeiYongPing
Tutor: GaoXin
School: Changchun University of Science and Technology
Course: Microelectronics and Solid State Electronics
Keywords: InSb Amorphous Magnetron sputtering Optical Characteristics
CLC: TN36
Type: Master's thesis
Year: 2010
Downloads: 36
Quote: 0
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Abstract


InSb and crystalline materials, amorphous a-InSb material has a low cost and simple preparation process . But the current lack of amorphous semiconductor materials at home and abroad a comprehensive and exhaustive research . This paper carried out a-InSb thin film preparation, characterization and hydrogen passivation research work . This thesis is based on the growth mechanism of amorphous films , prepared by magnetron sputtering of a-InSb films . X- ray diffraction , X-ray energy dispersive spectroscopy , scanning electron microscopy and other means a-InSb thin film structure, composition and surface properties were characterized by analysis of process parameters on the structure, composition and morphology , we have obtained the surface morphology good a-InSb films . Ellipsometer using a spectrophotometer and analysis of the a-InSb thin film optical properties. And the a-InSb thin film electrical and photosensitive characteristics were analyzed . The prepared a-InSb thin film has obvious in the light sensitive properties. Furthermore , the film material hydrogenated studies to analyze the hydrogen optical band gap of the film after the change , the analysis that , the incorporation of hydrogen with a passivation effect.

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > Semiconductor optoelectronic devices
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