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Preparation of Metail Oxide Semiconductor by Wet Chemical Methods

Author: JiaHong
Tutor: YaoKuiHong；WangLongCheng
School: Zhejiang University of Technology
Course: Materials Science
Keywords: Cuprous oxide Solar cell Electrochemical Hydrothermal method Crystal morphology
CLC: TN304.21
Type: Master's thesis
Year: 2010
Downloads: 97
Quote: 0
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Abstract


Solar energy as an inexhaustible source of clean energy is the solution to the energy crisis and environmental issues is one of the most effective way. Solar cell materials, high-purity silicon material with high production costs, high energy consumption, high pollution emissions and other shortcomings; highly toxic cadmium sulfide, cadmium telluride, cause serious pollution on the environment; copper indium selenide thin film batteries and because indium the selenium are scarce elements, thereby limiting its large-scale production and application. Development of new types of solar cell material is the desired situation. Cuprous oxide and zinc oxide as the oxide semiconductor, has abundant raw materials, low cost, direct energy band structure and theoretical conversion efficiency advantages, used in solar cells enormous potential. In this paper, on the basis of familiar Research on the cuprous oxide and zinc oxide, by changing the growth conditions of cuprous oxide and zinc oxide, surface morphology and crystal orientation control of cuprous oxide and zinc oxide, explore their growth mechanism to study their performance, in order to achieve controllable shape, performance adjustable. In this paper, prepared by the electrochemical method and hydrothermal cuprous oxide or zinc oxide samples, by structural performance characterization and analysis. The studies show that: 1. Different surfaces of the cuprous oxide-type oxygen ion concentration, morphology and crystal orientation of the cuprous oxide film can be controlled through the control of the pH value of the electrolytic solution. With the increase of the pH value, cuprous oxide crystal growth orientation from (100) to (111) changes in morphology to the three-sided pyramid transition from tetrahedral pyramid; capacitance - voltage test showed that the electrical properties of the cuprous oxide with crystal orientation changes in significant changes: the flat-band voltage reduced from 0.157 V to -0.331 V; carrier concentration from 2.8 × 10 18 cm -3 to 5.5 × 1018 cm -3 . The optical tests showed that the cuprous oxide directly with the structure of the oxide semiconductor band gap of about 2.06 eV. Because different crystal planes of the cuprous oxide-type oxygen ion concentration, by controlling the the hydrothermal solution pH value, and adding an organic additive to influence the growth rate of success in the different crystal planes of the cuprous oxide crystals prepared with different morphologies structure cuprous oxide. The experimental results show that as the pH value increased, the crystal growth orientation of the cuprous oxide (100) to (111) changes from dendritic morphology changes to the cube. Cuprous oxide crystal structure, it presents a reasonable explanation of the cuprous oxide crystal growth. Hydrothermal Synthesis of zinc oxide crystals, experimental results show that, of zinc oxide crystal morphology with the pH of the solution will change, but found no apparent regularity, the need for further study.

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > General issues > Material > Compound semiconductor > Oxide semiconductor
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