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Fabrication and Properties of Cryogenic Thermoelectric Thin Films

Author: ShuMin
Tutor: WangXueSheng；QiXueGui
School: East China University of Science and Technology
Course: Chemical Process Equipment
Keywords: thermoelectric thin film magnetron sputtering cryogenic Bi/Sb
CLC: TB34
Type: Master's thesis
Year: 2011
Downloads: 101
Quote: 0
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Abstract


Semiconductor thermoelectric(TE) generation which converts heat to electrical energy with thermoelectric semiconductor is a total static method of electricity generating. It is regarded as a promising way to achieve electricity generation with LNG cold energy. The adaptive temperature range of micro-Nano TE materials in most of the researches is greater than the temperature of environment. TE semiconductor which is capable of generating electricity below-20℃as well as the research work which increase its optimum coefficient are rarely reported in literatures. The performances of TE material are improved so as to use it in the TE generator in LNG cold energy recycling. With operating properties optimized in magnetron sputtering and TE film deposited uniformly, High feature TE material is produced is this paper.In this thesis, Bi/Sb lattice composite thermoelectric thin films on Si substrates are fabricated by radio-frequency (RF) magnetron sputtering equipment. The modulation structure are adjusted to improve the thermoelectric properties of films. The optimized sputtering parameters of Bi and Sb are obtained. The relationship of thin-film thickness and sputtering time of Bi and Sb are gained respectively. Modulation structure can affect the growth behavior and properties of Bi/Sb multilayer films greatly. Interface stress of Bi and Sb layers is an important factor to influence the growth behavior of films. Modulation structure can not only change growth rate, but also affects preferred growth direction of the films. When modulation period is fixed to 40 nm and the modulation ratio is equal to 1:4, the Seebeck coefficient and the power factor reach the maximum values of 2.48μV/Kand26.5μW/mK2 at 235K. When modulation ratio is fixed as 1:1, the particle size and surface roughness of the multilayer films raise with the increase of the modulation period. The conductivity is changed slightly with the reduction of the modulation period. When modulation period is equal to 40 nm, the Seebeck coefficient and the power factor of the multilayer films reach the maximum values of-2.64μV/K and 17.22μW/mK2.

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