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The Studies on the UV Photodetector and Resistive Random Access Memory of ZnO Nanowire Shottky Barrier

Author: WuXingHui
Tutor: ChengGang；DuZuLiang
School: Henan University
Course: Condensed Matter Physics
Keywords: ZnO nanowires Schottky barrier UV detection Resistance change memory
CLC: TB383.1
Type: Master's thesis
Year: 2011
Downloads: 135
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Abstract


In this paper, we study the Schottky barrier on the transport properties of ZnO nanowires control, high-performance prototype device regulatory barrier to the development of the UV detector, resistive memory. Desorption of oxygen at the interface under ultraviolet irradiation and hole capture barrier to effective regulation, the development of a UV detector with high sensitivity and fast response time. In addition, we have also studied the role of ZnO nanowire surface oxygen vacancies on the structure of the barrier control, pulse voltage on the interfacial concentration of oxygen vacancies Regulation, the development of the resistance switching random storage prototype with a fast write speed and high ratio of read window nanometer devices. Chapter 1 introduced the first one-dimensional photodetector and Resistive Random Access Memory Research Progress. Highlights are based on a single nanowire Schottky barrier ultraviolet detector and the resistance switching random access memory, and as a basis for a clear thesis topic, purpose and main contents. Chapter 2 describes the gold catalyst-assisted Vapour-Liquid-Solid (VLS) growth method of single-crystal ZnO nanowires with good crystallinity and the reign of electric field assembly method assembly single ZnO nanowire UV detection device and Resistive switch random access memory. Chapter 3 Preparation of ZnO nanowires with high sensitivity and fast response time Schottky barrier ultraviolet detectors, and its characterization. Devices ON / OFF ratio, sensitivity and photocurrent gain of 4 × 105, 2.6 × 103 A / W, and 8.5 × 103 respectively. When you turn off the UV light source in the Quick Reply stage photocurrent index decreased by about three orders of magnitude, the average recovery time, and time constant of 0.28 s and 46 ms, respectively. Discussed further nanowires Schottky barrier photodetector photocurrent mechanism and restore process, and the photocurrent tunneling mechanism is the root cause of the nanowires Schottky barrier photodetectors having a fast response time. ZnO nanowire surface adsorption of O2 and the surface state of the hole capture on the barrier height control, and the use of effective regulation of UV irradiation of O2 adsorption and barrier height, and the development of a rapid response time and high sensitivity UV detection , and other properties of the obtained ultraviolet detector was studied. Chapter 4 Preparation of the resistance switching random storage prototype nanodevices with fast write speed and high ratio of read window. High and low resistance states of the device switch 106, the write time of less than 20 ns, switch to keep time greater than 104 s. ZnO nanowire surface oxygen vacancies wear on the barrier height and tunneling current, effective regulation and control of surface oxygen vacancy concentration and pulse voltage turn on ZnO nanowire Schottky barrier resistance change memory high and low resistive state the regulation. And analysis of the impact device reads and erase time factors, based on one-dimensional nanowire Schottky barrier structure control resistive switching memory mechanism model of the interface oxygen vacancy concentration regulation to achieve.

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