Dissertation > Excellent graduate degree dissertation topics show

Theoretical Study on Quantum Dots Semiconductor Optical Amplifier and MOCVD Growth of InAs/GaAs Quantum Dots

Author: FeiShuPing
Tutor: HuangLiRong
School: Huazhong University of Science and Technology
Course: Optical Engineering
Keywords: Quantum Dots (QDs) Semiconductor Optical Amplifier (SOA) InAs Metal-Organic Chemical Vapor Deposition (MOCVD)
CLC: TN722
Type: Master's thesis
Year: 2010
Downloads: 44
Quote: 0
Read: Download Dissertation

Abstract


Quantum dots （QDs） have gained considerable attentions over the recent years. The uniqueδ-like function density of states and strong carrier confinement indicates potential applications in optoelectronic devices. For QD semiconductor optical amplifier （SOA）, they show good performance such as high material gain, good temperature stability, low chirp, high-speed operation. These enhanced performances bring SOA a bright prospect in next generation optical fiber communication systems.However, at present, there still remain problems during the growth of QDs, which lead to the ineffectiveness of its excellent performance. Particularly, some of these problems are, not enough high density of dots, a random statistical distribution of dot sizes and positions, and large polarization dependence.This thesis mainly focuses on solving present problems of QD SOA, both theoretical and experimental researching methods are taken.For theoretical study, a structure called QD-coupled-QW is proposed to improve the carrier capture efficiency and polarization dependence of SOA. Matlab tool is used to simulate the optical gain and polarization dependence.For experimental study, samples of self-assembled InAs QDs on GaAs substrates are grown by metal-organic chemical vapor deposition （MOCVD） with the Stranski–Krastanov growth mode. Atomic force microscope （AFM） and photoluminescence （PL） measurement are used to evaluate structural characteristics and emission wavelength. Firstly, the influence of growth parameters （temperature, generation time,Ⅴ-Ⅲgroup ratio, etc.） are explored. Afterwards, InAs QDs with InxGa1-xAs strained-reducing layer （SRL） are investigated, a structure of variant In composition in InxGa1-xAs SRL is introduced to improve the performance of QDs. And then, samples are grown on substrates with different surface misorientation, comparative study among 0°、2°、15°misoriented substrates is presented.

Related Dissertations

  1. GaAs-based high-density InAs quantum dot materials preparation and characterization,TN304.05
  2. InAs / Ga (In) Sb superlattice long / far -band infrared detector research,TN304.055
  3. The Basic Research of the ZnO Thin Film Transisor,TN321.5
  4. Ultrafast nonlinear interferometer (UNI) study,TH744.3
  5. SOA all-optical wavelength conversion technology,TN929.1
  6. Aggregated Behaviors, Morphology of Polysaccharides Molecules Studied by Atomic Force Microscopy, and Preparation of Polysaccharides/quantum Dots Multilayer Films,O636.1
  7. Ultrafast nonlinear interferometer (UNI) theoretical and experimental study,TN256
  8. All-Optical Logic AND Gate Based on SOA and Its Application of Header Extraction,TN929.1
  9. Effects of the Antimicrobial Peptides on Escherichia Coli and Immunolabeled Receptors on Cell Surface Studied by Atomic Force Microscopy,R318
  10. All-optical Signal Processing Technologies Based on SOA Nonlinearities in Optical Network,TN929.1
  11. Key Technologies of All-optical Signal Processing Based on Nonlinearities in SOA,TN929.1
  12. YBCO superconducting layer deposition MOCVD process experimental study,TM26
  13. High-Speed All-Optical Signal Processing Based on Semiconductor Optical Amplifier,TN911.74
  14. Investigation on the Wide Spectrum Nano-Folding of Active Region LED Technology,TN304
  15. All-optical Signal Processing Technologies Based on the Nonlinearities of SOA and EAM in Optical Network,TN929.11
  16. The Study of Optical Properties on InAs Self-organized Quantum Dots,O472
  17. All Optical Wavelength Converter and Its Application in Optical Network,TN929.1
  18. Tunable Wavelength Conversion Based on FWM in Semiconductor Fiber Ring Laser,TN929.11
  19. Investigations on Characteristics and Applications of Injection Mode-locked Laser Based on SOA,TN248
  20. Investigation on High-speed Optical Transmission and All-optical Signal Processing,TN929.1
  21. Study on Interface Microstructure of InAs/GaSb Superlattice,TN304.055

CLC: > Industrial Technology > Radio electronics, telecommunications technology > Basic electronic circuits > Amplification technology,the amplifier > Amplifier
© 2012 www.DissertationTopic.Net  Mobile