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Research on Optimizing the Characteristics of 4H-SiC MESFET with Spacer and Field Plate

Author: WangPeng
Tutor: JiaHuJun
School: Xi'an University of Electronic Science and Technology
Course: Microelectronics and Solid State Electronics
Keywords: 4H-SiC MESFET Isolation layer Field plate Surface trap
CLC: TN386.1
Type: Master's thesis
Year: 2011
Downloads: 26
Quote: 0
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Abstract


Silicon carbide (SiC) material having a large band gap, high critical breakdown field, high electron saturation velocity, and high thermal conductivity and other properties, working under conditions of high temperature, high power, anti-irradiation, etc. the advantage has become in recent years in the field of semiconductor research hotspot. SiC material properties, the successful development of SiC microwave power MESFET devices prevalent in the high intrinsic surface states and interface states, making the device in the DC characteristics reflected a substantial decline in output current is always faced with the current instability in the high-frequency work aspects of the performance and reliability of the current collapse. Domestic and international isolation layer for device performance improvement measures and field plate. Isolation layer is used to suppress the surface trap field plate is used to increase the breakdown voltage, both have very good results. The above two structures together, so that the device surface trap can be suppressed to obtain a high output current and high breakdown voltage can be obtained but no studies. Degradation of device performance brought against the surface of the trap of the device, while the spacer layer and the field plate at the same time the introduction of the device structure, not only to achieve the suppression of the effect of the surface trap, and to increase the breakdown voltage; by optimizing the parameters of the two, output current and breakdown voltage of the device. Firstly, the use of two-dimensional device simulation software ISE-TCAD structure and physical models of 4H-SiC MESFET devices. According to the analysis of the characteristics of the DC operating characteristics of the traditional structure of 4H-SiC MESFET output characteristics, transfer characteristics, the basic model and research methods. Secondly, from the device output and transfer characteristics of the two aspects of the influence of the surface trap, and combined with the actual determined so that the degradation of device performance, the largest surface trap density and energy levels: the density of 1 × 10 13 < / sup> cm -2 , the conduction band energy level distance 1.8eV. In such cases, the decline in 4H-SiC MESFET drain-source current of approximately 120%, transconductance decreased by about 50%. Third, on the basis of the above studies on the isolation layer in the depth of the buried gate doping concentration, thickness, and the isolation layer were optimized and no trap ideal state comparison, optimized parameters: the isolation layer having a thickness of 0.1 μm doped heteroaryl concentration of 1 × 10 14 cm -3 , and the depth of buried gate is 0.05μm. This set of optimized parameters to simulate the effect of the surface trap effectively inhibited, and the introduction of smaller parasitic device DC performance has been greatly improved. Traditional structure relative to the trap, the drain-source current is increased by about 130% to the the transconductance gain greater than 20mS/mm voltage range increase of about 100%. Finally, the isolation layer on the introduction of a field plate structure, analyze their impact on the DC characteristics of the device. Analysis of mechanism of the device breakdown voltage is increased, which indicates the field plate and the spacer layer does not exist between the mutual influence. Optimize the length of the field plate, the breakdown voltage of the device can be improved about 60%.

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > Field-effect devices > Metal - oxide - semiconductor (MOS) devices
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