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Study of Defects in Germanium-doped Czochralski Silicon

Author: XuWuBing
Tutor: YangDeRen
School: Zhejiang University
Course: Materials Science and Engineering
Keywords: Czochralski silicon Oxygen precipitates Cavitary defect Ge-doped Irradiation
CLC: TN304.12
Type: Master's thesis
Year: 2011
Downloads: 27
Quote: 0
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Abstract


IC feature linewidth decreases so that the micro-defects in Czochralski Silicon control becomes increasingly important. With the wafer diameter is increasing as well as magnetron crystal pulling technology, the oxygen concentration in the silicon is decreased, which is unfavorable for the formation of the oxygen precipitates. Other hand, the formation of voids in the straight pull a silicon single crystal, the large defect (void) will affect the integrity of the metal - oxide - semiconductor (MOS) devices, the gate oxide layer, and adversely affect the performance of the device. The use of co-doping control microdefects in Czochralski Silicon is an important research direction of the silicon material. Czochralski Silicon based on growth mixed with high concentrations of germanium, characterized its performance. In addition, the study of the impact of the Void defects in the silicon single crystal of germanium doped Czochralski (GCZ) and particle irradiation on oxygen precipitation in germanium-doped Czochralski Silicon, made the following main findings: (1) the growth of germanium doped a concentration of 1020cm-3, no dislocation Czochralski Silicon germanium concentration of the different parts of the crystal is measured by secondary ion mass spectrometry, combined with the crystal growth process parameters, calculated germanium in silicon, the effective segregation coefficient of 0.56. The studies show that the density of cavitary defects, flow pattern defects (FPD) from head to tail of the silicon crystal is gradually decreased, indicating that the incorporation of germanium can suppress the formation of silicon crystal FPD. The study also showed that in the same silicon wafer processing conditions, the degree of warping of the silicon wafer from the silicon crystal near the head than the wafer from the vicinity of the tail. Taking into account the germanium concentration, so you can head to tail gradually increase from the silicon crystal doped germanium can effectively improve the mechanical properties of silicon. (2) study the various germanium doped Czochralski silicon FPD. The study showed that the Czochralski Silicon in the lightly doped the FPD density GCZ silicon decreases with increasing Ge concentration. Compared with the heavy B-doped CZ silicon, FPD the Heavily Doped B GCZ silicon density is higher; heavily doped P the GCZ silicon FPD density lower than the CZ silicon. The analysis in the growth process in the lightly doped GCZ silicon, germanium atom can consume the free space thus inhibiting the formation of large size void defects and FPD; heavy the B doping GCZ silicon in B and Ge atoms of the role of stress compensation can increase the vacancy concentration, thus promoting the formation of the defects associated with the large-size void of the FPD. (3) study the impact of particle irradiation on oxygen precipitation in Czochralski Silicon. It was found that the electron irradiation can promote the formation of oxygen precipitates, and the greater the radiation dose to promote the role of the more obvious. Significant oxygen precipitate nucleation can take place in the neutron irradiation GCZ silicon sample, 450 ℃; neutron irradiated CZ silicon sample, only when the temperature is raised to 650 ℃ to the formation of oxygen precipitates in the core; without irradiated CZ and GCZ of silicon sample, only when the nucleation temperature is raised to 800 ℃ to form an oxygen precipitate core. The above results show that the neutron irradiation of GCZ silicon in oxygen precipitate nucleation promoting more obvious.

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > General issues > Material > Elemental semiconductors > Silicon
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