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Statistical Property of Random Surface of ZnO Thin Filmprepared by RF Magnetron Sputtering

Author: HuoQingSong
Tutor: ZhangNingYu
School: Shandong Institute of Architecture
Course: Condensed Matter Physics
Keywords: ZnO thin films Magnetron sputtering An atomic force microscope Surface morphology Statistical properties
CLC: O484.1
Type: Master's thesis
Year: 2011
Downloads: 49
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Abstract


Zinc oxide (ZnO) is a wide band gap ( room temperature 3.3eV) Ⅱ - Ⅵ compound semiconductor , the exciton binding energy of 60meV, has a hexagonal structure . The lattice constant a = 0.3249nm , c = 0.5206nm . The ZnO thin film having a good transparent conductive , piezoelectric, photoelectric , gas sensing , pressure-sensitive , and easy to achieve integration with a variety of semiconductor materials . Magnetron sputtering method, used in the experiments in this paper can be obtained under the best conditions uniform, dense film excellent c-axis orientation and the visible band transparency good advantages , makes it the most studied in the ZnO preparation and the most widely used method. Recently , due to the potential applications in the field of optoelectronic , ZnO thin film morphology has been widespread concern. The surface topography is one of the main characteristics of the film mechanical and optical characteristics , such as : a magnetic field strength of the film will be changed with the contact surface roughness change the conductance of the metal thin film depends on its surface roughness . However, the position coordinates of the random height distribution of the surface morphology is variable random process difficult a strict mathematical expressions to represent , so commonly used statistical functions or a high degree of self - correlation function and other statistical parameters to describe the film random surface . This article using RF magnetron sputtering method , respectively , in the quartz glass and silicon substrates sputtered ZnO film , sputtering pressure were 0.5Pa and 0.7Pa . Experiment the background vacuum of 4.5 × 10-4Pa, the sputtering power of 120W, oxygen and argon flow rates of 4 SCCM and 16 sccm , and the sputtering time of 2 hours, using an atomic force microscope to observe the surface morphology . This article focuses on analysis of thin - film growth conditions ( different substrate , sputtering pressure ) of the surface morphology of the ZnO film , and made the appropriate comparison . Gaussian correlation surface morphology of ZnO thin films , references to the Gaussian model China are root the roughness ω and transverse correlation length ξ parameters to describe the relevant characteristics of the surface film random . Numerical methods to obtain the sample surface of a high degree of self- related function and square root roughness , and Gaussian function of the height of the autocorrelation function carried out fitting the sample surface lateral Related length and other statistical characteristics amount to quantitative description of ZnO thin films of the statistical characteristics .

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CLC: > Mathematical sciences and chemical > Physics > Solid State Physics > Thin Film Physics > Film growth,structure and epitaxy
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