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Vacuum thermal evaporation Preparation . Rubrene/C60 for the active layer of organic solar cells ( OSCs ) , mainly for the following three aspects : 1. Preparation of a structure of ITO / Rubrene ( 35 nm ) / C60 ( 35 nm ) / BCP ( 6 nm ) / Al ( 150 nm ) , organic solar cells and anode modification layer MoO3 and 3V bias device performance . The results show that : the open-circuit voltage of the device into the anode modification layer , the energy conversion efficiency were increased by 5.3 and 11.3 times . Anode modification layer can significantly enhance the device 's built - in electric field, to improve exciton separation and transport . Biased treatment can be removed some of the defects , to improve the performance of the device . Prepared structure of ITO / BCP or Alq3 ( 0,2,6,10,20,40 nm ) / C60 ( 50 nm ) / Rubrene is ( 50 nm ) / MoO3 ( 5 nm ) / Al ( 130 nm ) inverted heterojunction organic solar cell , wherein the BCP or Alq3 as an electron transporting layer . When the BCP or Alq3 ≤ 6 nm , the performance of the device with little variation in thickness of the electron transport layer ; when the BCP or Alq3 ≥ 10 nm , with the increase in the thickness of the electron transport layer containing Alq3 device performance decay quickly , BCP - containing devices attenuation performance is relatively slow , and the open circuit voltage remains constant . The analysis shows that : when the electron transport layer is thin , rough ITO electrons more easily injected from C60 to ITO ; When the electron transporting layer is thick , the energy between BCP/C60 is band bending so that almost does not exist between the potential the barrier , containing BCP device performance is poor mainly due to the BCP poor electron mobility with Alq3 device performance is poor mainly due to the potential barrier between the Alq3/C60 . 3 MoO3 anode modification layer , the active layer Rubrene/C60 Preparation of the small organic molecules of the upright and inverted heterojunction solar cell . The device compared to the upright structure , inverted device open-circuit voltage ( Voc ) , short-circuit current ( Isc ) , fill factor ( FF ) , the power conversion efficiency (η) were increased by 34% , 20% , 25% , 102% . When inserted into the BCP the cathode buffer layer , the barrier of Al atoms of the thermal destruction of the C60 layer , no significant effect on the performance of the inverted device , but significantly improves the performance of the upright device . MoO3 and BCP inverted and upright device .
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