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Analyses on Mechanical Characteristics of Single-barrier Quantum Well Capacity Varactor

Author: ZhouQiuYun
Tutor: XuLiPing
School: University of North
Course: Microelectronics and Solid State Electronics
Keywords: The capacitive reactance Meso-piezoresistance effect Conduction current Pressure tolerance factor Modulation ratio
CLC: TM47
Type: Master's thesis
Year: 2011
Downloads: 5
Quote: 0
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Abstract


Recent years, with molecular beam epitaxy (MBE) and NEMS processing technology development and application of new types of superlattice quantum well devices are processed . Generated containing the various effects of the quantum effect due to the smaller size will be prominent , and will reflect the new features and performance NEMS devices based on these effects . In this paper, based on mesoscopic piezoresistive effect , introduced a new sensor , single barrier quantum well capacitive reactance , and by this single potential barrier quantum well structure plus the stress , to change the material's band parameters and physical properties , the purpose of capacitive reactance ultimately improve the sensitivity and capacitance modulation ratio , a high capacitance modulation ratio implies a high device operating frequency. This paper describes a one electron wave emitted from the emitter to the collector when the transmission process of the electron wave , wherein between the emitter and the collector is composed of InGaAs / AlAs / InAlAs materials single barrier -quantum well structure , in deduced based on the reflection and transmission coefficients , and thus introduced a conduction current formula , the reduced conduction current method . The mesoscopic piezoresistive effect based on the use of Matlab software to simulate the change of the capacitance of the capacitive reactance , and ultimately the capacitive reactance of the modulation ratio has been improved. The main contents are as follows : (1) analysis of superlattice quantum well material , and on this basis , the introduction of Ⅲ - Ⅴ elements , select the appropriate barrier material , and lists the barrier structure . ( 2 ) The combination of this thesis, the main points of a single potential barrier quantum well capacitance electric anti diode of the electronic wave of the transmission and the energy band structure description ; (3) introduced a single barrier quantum well capacitance electric resistance to control conduction current decreases the . (4) deduced by analysis of a single barrier structure in both cases in a large bias and small bias in a large bias capacitance and a small bias expression . More detailed than the purpose of the single potential barrier structure plus a certain strain capacitance changes deduced capacitive reactor pressure tolerance factor , and ultimately to improve the capacitive reactance of the sensitivity and modulation .

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CLC: > Industrial Technology > Electrotechnical > Transformers, converters and reactors > Reactor
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