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Preparation Technology Effect on Properties of Polycrystalline Silicon Thin Films by Aluminum-induced Crystallization

Author: ChenHaiLi
Tutor: ShenHongLie
School: Nanjing University of Aeronautics and Astronautics
Course: Materials Processing Engineering
Keywords: Aluminum induced crystallization Polycrystalline silicon thin film Magnetron sputtering Vacuum thermal evaporation Temperature factors
CLC: O484.1
Type: Master's thesis
Year: 2011
Downloads: 60
Quote: 0
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Abstract


Combines the advantages of low manufacturing cost of the high conversion efficiency of the crystalline silicon and amorphous silicon thin film polycrystalline silicon thin film, is considered to be a more excellent performance of photovoltaic materials. There are many ways to the preparation of polycrystalline silicon thin film, aluminum-induced crystallization method is a more novel preparation method. In this paper, aluminum induced crystallization conducted in-depth research and analysis of different preparation conditions on aluminum-induced polycrystalline silicon thin film prepared by the process of polycrystalline silicon thin film. The use of the the HWCVD Preparation thickness 300nm initial amorphous silicon and natural oxidation 50h, followed by magnetron sputtering deposition the initial aluminum film having a thickness of 100nm to form a-Si/SiO 2 / Al stacked -layer film structure, and finally in 500 ° C, under a protective atmosphere of argon annealing different time. The experiment supported by a high degree of preferred orientation of the (111) polycrystalline silicon thin film, and the grain size increases with the annealing time and annealing after 5h polysilicon grain size of 100μm. Preparing polycrystalline silicon thin film obtained by its crystalline quality and the ability to absorb visible light is enhanced with the annealing time and also confirmed that the heavily doped p-type semiconductor thin film. Initial aluminum film deposition process into a vacuum thermal evaporation, magnetron sputtering and other aluminum-induced crystallization process conditions remain unchanged. After annealing, an aluminum film is deposited by vacuum thermal evaporation method is able to induce the same polysilicon thin film (111) preferred orientation. As the annealing time is extended, the grain is gradually increased, the crystalline quality gradually improved, the finally obtained polycrystalline silicon grain size of about 100μm. But compared with a magnetron sputtering method, the polycrystalline silicon thin film of an aluminum film deposited by vacuum thermal evaporation induced stress is smaller, the higher the crystalline quality, and faster crystallization rate. The the previously prepared a-Si/SiO 2 / Al laminated film structure 450 ° C, 475 ° C and 500 ° C for three temperature annealing found that aluminum induced crystallization of polycrystalline silicon thin film The grain size, crystalline properties and the crystallization rate on the annealing temperature is more sensitive to the annealing temperature was raised to 500 ° C when the annealing temperature is 475 ° C or less can not induce a large grain polysilicon excellent crystalline quality aluminum induced crystallization The phenomenon was very obvious. In a-Si/SiO 2 / Al laminated film structure using magnetron sputtering deposition initial aluminum film, found that the substrate temperature by changing the deposition of aluminum film, aluminum induced crystallization preparation The size of the crystal grains of the polycrystalline silicon thin film becomes smaller with increasing substrate temperature in the deposition of an aluminum film, and the crystallization ability and crystalline quality deteriorates, when the deposition of an aluminum film, the substrate temperature was raised to 200 ° C or above when even aluminum induced crystallization phenomenon does not occur.

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CLC: > Mathematical sciences and chemical > Physics > Solid State Physics > Thin Film Physics > Film growth,structure and epitaxy
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