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In this paper, the ultra-high vacuum magnetron sputtering on Si (100) substrate design synthesis ReB2/TaN nano multilayers. Sweep surface electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and other means of analysis of the organization and structure of the film; surface profiler (XP-2) and nanomechanical testing system of mechanical properties, including: the internal stress of the film, hardness, elastic modulus, and the thin film and the substrate adhesion, the film thickness. Mechanism and nano-multilayers induced hard start to explore the multilayer structure and its components affect its hardness. First prepared by optimizing parameters, the structural stability of ReB2 monolayer film and TaN, and hardness of the monolayer film modulus using nanoindentation system characterization. Secondly, a series ReB2/TaN nano-multilayers prepared by changing the experimental conditions of the modulation cycle modulation, and discuss its structural performance. The structure shows that: 1. Experimental design the modulation cycle XRR test calculations in good agreement, SEM, XPS proved clear interface between the layers by SEM intuitive that the multilayer film multilayer structure, XPS proved layers of and between Re, B and Ta occur periodically with the sputtering time, the element content of N and the multilayer structure is substantially consistent. diffraction peak, ReB2, TaN showed obvious hexagonal structure. The results show that when the modulation period of 10 nm, a modulation ratio of 1:1, the most intense diffraction peaks, indicating this condition most complete multilayer crystal growth. 3. Nanoindentation test results show that: most of the multi-layer film hardness and elastic modulus than elemental film, the residual stress of the film due to the introduction of the multi-layer structure to improve. When the modulation period of 10nm, the modulation ratio is 1:1, the multilayer film achieve maximum hardness of 38.71 GPa, elastic modulus of 474.07 GPa and and the binding force of the film - group to achieve the best results. 4.TEM image description when the modulation period of 10 nm, modulation ratio 1:1 ReB2/TaN nanometer multilayers interface formed between the apparent total derivative long. Based on the above findings, it is formed at the interface between the two modulation layer in the multilayer film growth of cell growth, and the modulus difference between the two modulation layer material under the conditions of grid, the multilayer film The structure and superhard effect plays an important contribution. Now explain the theoretical model of the effect of superhard some modulus difference and alternating force field is consistent with experimental results.
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