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The Preparation and Grow Dynamic Analysis of TiCx N1-x /Al Composite Foil for Capacitor

Author: TanMi
Tutor: PanYingJun
School: Wuhan University of Science and Technology
Course: Plasma Physics
Keywords: aluminum foil the surface roughness dynamic scaling the growth mechanism
CLC: TM535.1
Type: Master's thesis
Year: 2011
Downloads: 23
Quote: 1
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Abstract


Capacitors are a class of basic electronic components used widely as telecom, computer, civil and military electronic products. At present, etching is the main manufacturing technique for improving the specific capacitance of aluminum foil for capacitors,. However , there have been some disadvantages with the etch process such as low specific capacitance, complex etching processing procedures and serious environmental pollution , etc.The purpose of this study is to solve the disadvantages above, and to proposed a new method for preparation of high capacitance TiCxN1-x/Al aluminum foil by using multi-arc ion plating technique.With dynamic scaling theory, the nucleation and growth dynamic behavior have been studied for TiCxN1-x nano films.The first part of this paper has mainly studied the effect of factors on specific capacitance of aluminum foil such as the bias voltage, the deposition time and the flux ratio of N2 and C2H2. Concretely, it embodies: bias voltage is 150V; deposition time is 20min and the flux ratio of N2 and C2H2 is 1:1. Prepared TiCxN1-x/Al aluminum foil following the process, the specific capacitance of aluminum foil can reach 1920μF/cm2, two times higher than that of the aluminum foil prepared by traditional eaching process. In addition, the morphology analysis showed that TiCxN1-x film grew outwardly with small island-like or columnar aggregates of small and uniform particles.The second part of this paper has mainly studied the growth mechanism of TiCxN1-x nano films with dynamic scaling theory. The results showed that: TiCxN1-x film had a smooth-rough-smooth period. TiCxN1-x film had two distinct stages. In the first stage ,the scaling exponents wereα= 0.65±0.04 ,β= 0.50±0.05 andα+α/β≈2, it was KPZ universalityclass. In the second stage, the rougheness exponentαwas 0.35 and the surface roughening rate slowed down. The surface roughness of TiCxN1-x film increased with the bias voltage increased, then began to decrease. The surface roughness of TiCxN1-x film increased with the flux ratio of N2 and C2H2 increased, then decreased, finally remained unchanged. Therefore, the specific capacitance of aluminum foil can be improved by controlling the surface roughness of the film.

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CLC: > Industrial Technology > Electrotechnical > Electrical > Capacitor > Electrolytic capacitor > Solid Electrolytic Capacitors
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