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Atomization prepared CdS thin film doped Characteristics

Author: LiJiangBo
Tutor: HuWenCheng
School: University of Electronic Science and Technology
Course: Materials Science
Keywords: Diethyl dithiocarbamate cadmium (CED) CdS Doping The ultrasonic atomization pyrolysis (USP)
CLC: O614.242
Type: Master's thesis
Year: 2009
Downloads: 144
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Abstract


New materials plays a very important role in the future development of science and technology, it will promote the rapid development of science and technology to enhance the strength of the national economy, and improve the level of people's daily lives. Optoelectronic information materials research and development, it is important. CdS is a wide range of applications of optoelectronic information materials, engaged in the research, and will promote the development of China's optoelectronics technology and its applications, and at the same time also of great significance for the development of our national economy. The paper describes in detail the preparation of CdS thin films and its principles, and summarizes the research status and application of the CdS thin films. In this experiment, diethyldithio carbamate cadmium (CED) - dimethyl sulfoxide, a mixed solution of precursor solution using a homemade ultrasonic spray pyrolysis (USP) were prepared on a glass substrate of CdS doped miscellaneous film and X-ray diffraction (XRD), scanning electron microscopy (SEM), UV - visible spectrometer (UV-Vis Spectrometer) testing techniques to characterize the structure and performance of the film. A variety of growing conditions, such as dopant concentration, substrate temperature, deposition time and annealing process parameters on the structure and properties of CdS thin films. The experimental results showed that the atomized vapor deposition of CdS thin film, the substrate temperature on the thin film of c-axis preferred orientation greater impact, as the substrate temperature increases, the thin film of c-axis orientation degree enhancement; when the substrate temperature is too high , c-axis preferred orientation weakening of the film, the crystallinity deteriorates. Therefore, a suitable substrate temperature is an important factor of the ultrasonic atomizing pyrolysis technique highly consistent guide to the c-axis orientation of the CdS film. Magnesium-doped film samples when the doping concentration from 0 to 50 at% growth, the C-axis preferred orientation film first increased and then decreased when the doping concentration of 10 at% C-axis preferred orientation film strongest. XRD observation doped sample film generated films are polycrystalline, hexagonal structure. With the substrate temperature, the doped films of the C axis preferred orientation enhanced diffraction peak half-height width gradually decreased, calculated by the Scherrer formula found, the grain size increases. With the increase in the proportion of the manganese atoms in film sample Codoped, Film UV transmittance spectra of the absorption edge of the band toward the high-wavelength drift; further increased when the proportion of the manganese atom (Mg: Mn = 1:5 ), we found that the transmission spectrum the absorption edge of the band toward the low wavelength drift. Undoped the film conductivity type is n-type; when the doping concentration of 10 at%, the transition conductivity type is p-type; doping amount is further increased, to 30 at%, the transition conductivity type is n-type; when doping amount of up to 50 at%, the conductivity type into the p-type. In the doped samples, as the doping amount increases, the resistivity of the film is gradually increased.

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CLC: > Mathematical sciences and chemical > Chemistry > Inorganic Chemistry > Metal elements and their compounds > Section II group metal element and its compounds > The zinc Vice family (Ⅱ B group metal elements ) > Cd Cd
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