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Study on the Detect-Circuit of the Capacitive Micro-Accelerometer Sensor by Silicon

Author: WangYueSheng
Tutor: XuShiLiu
School: Chongqing University
Course: Microelectronics and Solid State Electronics
Keywords: Micro accelerometer Detection circuit Modem Microelectromechanical systems
CLC: TP212
Type: Master's thesis
Year: 2009
Downloads: 241
Quote: 1
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Abstract


Capacitive silicon micro-acceleration sensor is an important inertial sensors, is one of the basic components of the inertial measurement system has a wide range of applications in the production life and military weapons. Compared with the traditional acceleration of the many advantages of light weight, low cost, low power consumption, small size, and therefore become a focus for researchers. The development of the detection circuit is one of the key technologies. Due to the limitations of the processing conditions, domestically developed micro capacitive accelerometer meter mainly bulk silicon process, so I can not read based surface processing circuit integrated in a chip. This thesis focuses on the domestic bulk silicon process developed micro-electromechanical systems (MEMS) capacitive accelerometer sensor signal acquisition and processing integrated circuits. Processing of thick film hybrid integrated sensors and detection circuit. Its design ideas can also be used for differential capacitive sensor surface micromachining fabrication, monolithic integration. The structure and working principle of this thesis, completed the following research: ① the papers around the capacitive accelerometer system research focuses on the structure and working principle of silicon micro-acceleration sensor, electrical, and mechanical characteristics. ② micro acceleration sensor signal acquisition and processing detection circuit a thorough and systematic study. Is designed as the core of a modulation and demodulation thought tiny capacitance detection circuit. Transistor model parameters and the Institute of Electronics Technology Group Corporation 34 2 micron BiCMOS process provided by XFAB 2 micron BiCMOS process transistor model parameters using the Candence software processing circuit of the unit and the whole system were simulation. The unit circuit comprises a bias voltage source, a bias current source, since the detection circuit, a buffer amplifier, a demodulation filter circuit, the clock generating circuit, a high-frequency carrier generator. The system has a self-test function, the output voltage signal of the circuit system and the acceleration signal proportional relationship. ③ each unit circuit of the entire detection circuit and the whole circuit layout design. Complete layout of the territory, and the PDK file to complete the DRC, ERC and LVS check. For symmetry requirements are relatively high unit to take advantage of a variety of matching techniques, such as common centroid layout, virtual devices, thermally symmetrical distributions. The pads in the territory of the ESD protection design. In order to enhance the reliability of the circuit to increase the redundancy of the circuit design.

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