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Research on Anisotropic Etching Processing Technique with Wet Method on Silicon Devices

Author: WanShanShan
Tutor: DuanMuQingZuo
School: Changchun University of Science and Technology
Course: Microelectronics and Solid State Electronics
Keywords: KOH Silicon Anisotropic etching Back thinning
CLC: TN305.2
Type: Master's thesis
Year: 2009
Downloads: 250
Quote: 2
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Abstract


Exhibit anisotropic etching characteristics of single-crystal silicon in the high pH value of the alkaline solution (e.g. : Salaried , KOH, NH 4 OH , TMAH , etc.) , in microelectronics micro-optics , the field of micro - mechanical systems , bulk micromachined technology has been widely used . An alkaline solution of silicon micromachining , in film production KOH process production costs low, can be repeated, and KOH is therefore most commonly used in the anisotropic etching of the silicon . In this paper, a mechanistic model of KOH anisotropic etching of silicon wafers principle and anisotropic etching of silicon in alkaline solution , KOH anisotropic wet silicon back thinning experiment by mechanical polishing on the the silicon back of thinning , comparative summary of the results of both experiments and analyze the reasons for the impact of surface phenomena .

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > General issues > The semiconductor device manufacturing process and equipment > Surface treatment
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