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As the diamond has a series of excellent properties, it can be used widely in many fields. However, the grain of CVD diamond film conventional, whose size is larger, growth as columnar and surface roughly, which is also very uneven film thickness, while the high hardness of polished surface but also to follow-up has caused great difficulties, limiting the promotion and application of diamond film. Therefore, improving the surface roughness of conventional diamond film and polishing follow-up become a new focus.In this paper, preparation and post-modification of surface microstructure on the film surface morphology improved, first by microwave plasma CVD diamond films were prepared, and then use high-density plasma etching equipment for the surface of diamond film micro-etching, and finally microscopy and Raman spectroscopy by AFM were characterized on the diamond, to include the following contents.CH4 concentration, microwave power and deposition time are the main factors of diamond film growth. First, as the methane concentration, the growth rate of diamond films increased, but the quality of diamond film on the decline. CH4 concentration is 7.5% of the diamond films prepared good quality, growth rate faster, high-quality diamond films for preparing the appropriate conditions. Second, under the high microwave power 4000W quality of the films are good and stable growth rate high. Third, the quality of thin film deposition and the length of time is not much impact, but will affect the surface morphology. Fourth, complex multi-stage deposition process can be adjusted more ways to achieve continuous growth of multi-layer, surface roughness in the preparation of thick and low and high regard sp3 results better.From high-density oxygen plasma etching of diamond film was experimental conclusion: First, when the etching power is high, which can etch sp2 and sp3 key, and the etching rate of better than sp2 sp3. Less production covered at etching time, reflecting the high sp3 content. Second, flattening the surface after etching, surface roughness is reduced, the film quality has improved. Third, sp3 into sp2 key part of the key changes in the surface composition of the lower hardness of the diamond film surface is conducive to further polishing. Fourth, compared to the physical sputtering effect of argon, oxygen etching chemical reactions play an important role.
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