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Contact characteristics of metal -n-type zinc oxide nanofilm

Author: LiXinKun
Tutor: LiQingShan
School: Qufu Normal University
Course: Physical Electronics
Keywords: Metal - semiconductor contact Ohmic electrode Schottky barrier UV detector
CLC: TN304
Type: Master's thesis
Year: 2009
Downloads: 149
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Abstract


ZnO as a wide bandgap semiconductor material, the room temperature bandgap of 3.37eV, with excellent optical and electrical properties, are widely used in the UV detection, the areas of the short-wavelength lasers, a transparent conductive film or the like. In order to improve the ZnO semiconductor device performance, must be prepared to the contact of the high-quality metal-ZnO. This thesis film epitaxial growth technique using a pulsed laser deposition (PLD), prepared and systematic study of the contact characteristics of the metal-ZnO film. The main content of the paper are: 1. Grown ZnO film quality in the Al / Si substrate by PLD method. Detection and analysis by X-ray diffraction and scanning electron microscopy image of the thin-film crystalline quality and morphology. The results showed that the grown film having a high degree of c-axis preferred orientation, the surface of the film formation, the surface of the grain size of about 30nm, the same size and evenly distributed. The high crystalline quality of ZnO films laid the foundation for the preparation of fine metal-ZnO contact. 2. Explore and summarize the Al metal materials to prepare high quality n-type ZnO ohmic electrode. Good ohmic electrode is to be produced on the n-type ZnO films necessary to select a suitable work function metal as an electrode material, such as In, Ti, Al, etc.. Further, between the metallic Al and the n-type ZnO film growth AZO layer, a layer of highly doped than the direct contact of the Al and the n-type ZnO can be obtained more excellent ohmic performance. High temperature annealing can be effective to improve the crystal quality and electrical conductivity of the metal electrode, lower electrode and the n-type ZnO at the interface of contact barrier, thereby reducing the contact resistance. Provide guidance for further production performance n-type ZnO-based semiconductor devices. 3 Al and Ag were used as an ohmic electrode and the Schottky electrode successfully prepared a the ZnO Schottky type UV detector prototype device. Ⅰ - Ⅴ curve calculated the contact Ag and ZnO ideality factor of 1.22, the barrier height of 0.908eV. Put the device in a vacuum chamber 600 ° C annealing for 2 hours, and then calculate the ideality factor becomes 1.18 Ⅰ - Ⅴ characteristic curve, the barrier height increases to 0.988eV. 325nm incident light irradiation device, 5V bias before and after annealing under photocurrent 42.58mA and 98.23mA respectively, the ratio of the photocurrent and the dark current of 140.4 and 138.4, respectively. Photocurrent respect to the dark current is increased by more than two orders of magnitude. 4 to change the growth temperature of the Ag electrode, and the electrode of growth temperature on the contact characteristics of Ag-ZnO. Using X-ray diffraction, scanning electron microscopy and Ⅰ - Ⅴ test analysis of the crystal quality of the samples, structural and electrical properties. The results show that the growth temperature of the Ag electrode with different crystal quality are quite different, and Ag / ZnO have a major impact in the contact performance at 150 ℃ and 200 ° C for the growth of the Ag electrode to achieve a Schottky contact, Ag and ZnO, further analyzed to achieve the presence of the Schottky contact depends on the contact interface with the p-type ZnO Ag and ZnO.

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > General issues > Material
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